AM83135-010

AM83135-010 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 10 W MIN. WITH 5.0 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-010 BRANDING 83135-10 DESCRIPTION The AM83135-010 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-010 is supplied in the IMPAC™ hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 50 2 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W *Applies only to rated RF amplifier operation July 27, 1994 1/4 AM83135-010 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol I C = 7 mA I E = 1 mA I C = 7 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω VCE = 40 V IC = 600 mA 55 3.5 55 — 30 — — — — — — — — 5 — V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc PG Note: f = 3.1 − 3.5 GHz f = 3.1 − 3.5 GHz f = 3.1 − 3.5 GHz = = 100 µ Sec 10% PIN = 3.2 W POUT = 10 W POUT = 10 W VCC = 40 V VCC = 40 V VCC = 40 V 10 30 5.0 — — — — — — W % dB Pulse W idth Duty Cycle TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY 2/4 AM83135-010 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL H Z CL L ZIN FREQ. L = 3.1 GHz M = 3.3 GHz H = 3.5 GHz ZIN (Ω) 12.1 − j 1.6 10.0 + j 1.9 5.5 + j 1.7 ZCL (Ω) 12.7 + 16.0 14.3 + j 9.5 6.8 + j 7.7 H L PIN = 3.2W VCC = 40V Normalized to 50 ohms T EST CIRCUIT All dimensions are in mils. Substrate material: .025” thick Al 2O3 C1,C2 : 33 pF 50V Chip Capacitor C3 : 1 µf 50V Electrolytic Capacitor C4 : 1000 pF 200V Feedthru Capacitor C5 C6 C7 L1,L2 : : : : 0.1 µF 50V Disc Ceramic Capacitor 100 µf 63V Electrolytic Capacitor 33 pF 50V Chip Capacitor RF Choke, 2 Turns #26 Tinned Wire, .080” I.D. 3/4 AM83135-010 P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0221 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4