AM83135-030

AM83135-030 RF & MICROWAVE TRANSISTORS S -BAND RADAR APPLICATIONS . . . . . . . P RELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-030 BRANDING AM83135-30 DESCRIPTION The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-030 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 133 6.0 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.5 °C/W *Applies only to rated RF amplifier operation September 1992 1/3 AM83135-030 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 20mA IE = 4mA IC = 20mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 40V IC = 2A 55 3.5 55 — 30 — — — — — — — — 15 300 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc GP Note: f = 3.1 — 3.5GHz f = 3.1 — 3.5GHz f = 3.1 — 3.5GHz = = 100 µ Sec 10% PIN = 8.5W PIN = 8.5W PIN = 8.5W VCC = 40V VCC = 40V VCC = 40V 30 30 5.5 — — — — — — W % dB Pulse Width Duty Cycle PACKAGE MECHANICAL DATA .318/ .306 2/3 AM83135-030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3