B772

2SB772 PNP MEDIUM POWER TRANSISTOR Features ■ ■ ■ HIGH CURRENT LOW SATURATION VOLTAGE COMPLEMENT TO 2SD882 Applications ■ ■ ■ ■ ■ VOLTAGE REGULATION RELAY DRIVER GENERIC SWITCH AUDIO POWER AMPLIFIER DC-DC CONVERTER 3 2 1 SOT-32 (TO-216) Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary PNP type is 2SD882. Internal Schematic Diagram Order Codes Part Number 2SB772 Marking B772 Package SOT-32 Packing TUBE September 2005 Rev 2 1/8 www.st.com 8 1 Absolute Maximum Ratings 2SB772 1 Table 1. Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value -60 -30 -5 -3 -6 -1 -2 -12.5 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol RthJ-case Thermal Data Parameter Thermal Resistance Junction-Case____________________Max Value 10 Unit °C/W 2/8 2SB772 2 Electrical Characteristics 2 Table 3. Symbol ICES ICEO IEBO Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCE = -60 V VCE = -30 V VEB = -5 V Min. Typ. Max. -10 -100 -10 Unit µA µA µA Collector-Emitter Breakdown V(BR)CEO Voltage Note: 1 (IB = 0 ) Collector-Base Breakdown V(BR)CBO Voltage (IE = 0 ) V(BR)EBO VCE(sat) Note: 1 VBE(sat) Note: 1 IC = -10 mA -30 V IC = -100 µA -60 V Emitter-Base Breakdown Voltage IE = -100 µA (IC = 0 ) Collector-Emitter Saturation Voltage IC = -1 A IC = -2 A IC = -3 A IB = -50 mA IB = -100 mA IB = -150 mA IB = -100 mA VCE = -2 V V CE = -2 V V CE = -2 V VCE = -10 V -5 -0.4 -0.7 -1.1 -1.2 100 80 30 100 300 V V V V V Base-Emitter Saturation Voltage IC = -2 A IC = -100 mA hFE DC Current Gain IC = -1 A IC = -3 A IC = -0.1 A fT Transition Frequency MHz Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/8 2 Electrical Characteristics 2SB772 2.1 Typical characteristics Reverse biased area Figure 2. DC current gain Figure 1. Figure 3. Collector-emitter saturation voltage Figure 4. Base-emitter saturation voltage 4/8 2SB772 3 Package Mechanical Data 3 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 3 Package Mechanical Data 2SB772 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 6/8 2SB772 4 Revision History 4 Revision History Date 09-Sep-2005 Revision 2 Final version. New template Changes 7/8 4 Revision History 2SB772 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8