BAR28

BAR28 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Parameter Repetitive Peak Reverse Voltage 70 Forward Continuous Current* Ta = 25°C IFSM Surge non Repetitive Forward Current* tp ≤ 1s Tstg Tj TL Storage and Junction Temperature Range Symbol Rth(j-a) (s) b O - Test Conditions ct Junction-ambient* u d o V 50 mA - 65 to 200 - 65 to 200 230 °C °C Value Unit °C/W P e let so Unit d o r 15 Maximum Lead Temperature for Soldering during 10s at 4mm from Case THERMAL RESISTANCE uc Value ) s t( 400 mA ELECTRICAL CHARACTERISTICS r P e STATIC CHARACTERISTICS Symbol t e l o Min. Typ. Max. VF * * Tamb = 25°CIF = 1mA 0.41 Tamb = 25°CIF = 15mA 1 Tamb = 25°CVR = 50V 0.2 µA Max. Unit 2 pF 100 ps IR * * 70 Unit Tamb = 25°CIR = 10µA bs O Test Conditions VBR V V DYNAMIC CHARACTERISTICS Symbol Test Conditions C Tamb = 25°CVR = 0Vf = 1MHz τ Tamb = 25°CIF = 5mA Krakauer Method Min. Typ. * On infinite heatsink with 4mm lead length ** Pulse test: tp  300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2003 - Ed: 7A 1/3 BAR28 Fig. 1: Forward current versus forward voltage at low level (typical values). Fig. 2: Capacitance C versus reverse applied voltage VR (typical values). c u d Fig. 3: Reverse current versus ambient temperature. ) s ( ct u d o r P e t e l o s b O 2/3 o s b O - e t le ) s t( o r P Fig. 4: Reverse current versus continuous reverse voltage (typical values). BAR28 Cooling method : by convection and conduction Marking: clear, ring at cathode end. PACKAGE MECHANICAL DATA B A note 1 E B /C O E note 1 /D O O /D note 2 DIMENSIONS REF. Millimeters c u d NOTES Inches ) s t( o r P Min. Max. Min. Max. A 3.050 4.500 0.120 0.117 1 - The lead diameter ∅ D is not controlled over zone E B 12.7 ∅C 1.530 2.000 0.060 0.079 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) ∅D 0.458 0.558 0.018 0.022 E 0.500 e t le ) s ( ct 1.27 0.050 o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. s b O The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 3/3