BAS70-04

® BAR 18 BAS70-04 06 SMALL SIGNAL SCHOTTKY DIODES K N.C. A A1 K2 K1 A2 BAR18 BAS70-04 K A1 A K1 A2 K2 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. BAS70-05 SOT-23 (Plastic) BAS70-06 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s Tamb = 25°C Value 70 70 250 - 65 to +150 150 260 Unit V mA mW °C °C °C Note 1: for double diodes, Ptot is the total dissipation of both diodes *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a) THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient (*) Value 500 Unit °C/W (*) Mounted on epoxy board with recommended pad layout. December 2001 - Ed: 3A 1/4 BAR 18 / BAS70-04 06 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * IR ** Pulse test: Test Conditions Tj = 25°C Tj = 25°C Tj = 25°C IR = 10µA IF = 1mA VR = 50V Min. 70 Typ. Max. Unit V 410 200 mV nA * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2% DYNAMIC CHARACTERISTICS Symbol C τ* Test Conditions Tj = 25°C VR = 0V Tj = 25°C IF = 5mA F = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * Effective carrier life time. Fig. 1-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0E-2 1.8E-2 1.6E-2 1.4E-2 1.2E-2 1.0E-2 8.0E-3 6.0E-3 4.0E-3 2.0E-3 0.0E+0 0.0 Fig. 1-2: Forward voltage drop versus forward current (high level). IFM(A) 7E-2 Tj=100°C Typical values Tj=100°C Typical values 1E-2 Tj=25°C Maximum values Tj=25°C Maximum values Tj=25°C Typical values 1E-3 Tj=25°C Typical values VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2/4 BAR 18 / BAS70-04 06 Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(µA) 1E+1 Tj=100°C Fig. 3: Reverse leakage current versus junction temperature (typical values) IR(µA) 5E+2 1E+2 VR=70V 1E+0 1E+1 1E-1 Tj=25°C 1E+0 1E-1 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Tj(°C) 1E-2 0 25 50 75 100 125 150 Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 2.0 1.0 F=1MHz Tj=25°C Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm*8mm*0.5mm). Zth(j-a)/Rth(j-a) 1.00 δ = 0.5 δ = 0.2 0.10 δ = 0.1 T 0.1 VR(V) 1 10 100 Single pulse tp(s) 1E-2 1E-1 1E+0 δ=tp/T tp 0.01 1E-3 1E+1 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 350 300 250 200 S(Cu) (mm²) 150 0 5 10 15 20 25 30 35 40 45 50 P=0.25W 3/4 BAR 18 / BAS70-04 06 PACKAGE MECHANICAL DATA SOT23 (Plastic) E A DIMENSIONS REF. Millimeters Min. A A1 0.89 0 0.3 0.085 2.75 0.85 1.7 1.2 2.1 0.35 0.6 typ. 0.65 Inches Min. 0.035 0 0.012 0.003 0.108 0.033 0.067 0.047 0.083 0.014 e B e1 D Max. 1.4 0.1 0.51 0.18 3.04 1.05 2.1 1.6 2.75 Max. 0.055 0.004 0.02 0.007 0.12 0.041 0.083 0.063 0.108 0.026 S A1 B c D L e e1 E H L c H 0.024 typ. S FOOTPRINT DIMENSIONS 0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 mm inch 0.9 0.035 Ordering type BAR18 BAS70-04 BAS70-05 BAS70-06 s Marking D76 D96 D97 D98 1.1 0.043 Package SOT-23 SOT-23 SOT-23 SOT-23 Weight 0.01g 0.01g 0.01g 0.01g Base qty 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4