BAT43

BAT42 BAT43 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic dis- DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value 30 V Forward Continuous Current Ta = 25°C 200 mA IFRM Repetitive Peak Fordware Current tp ≤ 1s δ ≤ 0.5 500 mA IFSM Surge non Repetitive Forward Current* tp = 10ms 4 A Ptot Power Dissipation* Tl = 65 °C 200 mW Tstg Tj Storage and Junction Temperature Range - 65 to +150 - 65 to +125 °C °C TL Maximum Temperature for Soldering during 10s at 4mm from Case 230 °C Value Unit 300 °C/W VRRM IF Repetitive Peak Reverse Voltage Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* * On infinite heatsink with 4mm lead length October 2001 - Ed: 1C 1/4 BAT42 / BAT43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. VBR Tj = 25°C IR = 100µA V F* Tj = 25°C IF = 200mA All Types Tj = 25°C IF = 10mA BAT 42 Tj = 25°C IF = 50mA Tj = 25°C IF = 2mA Tj = 25°C IF = 15mA IR* Typ. Max. 30 Unit V 1 V 0.4 0.65 BAT 43 0.26 0.33 0.45 VR = 25V Tj = 25°C 0.5 Tj = 100°ÉC µA 100 DYNAMIC CHARACTERISTICS Symbol Test Conditions Tj = 25°C VR = 1V f = 1MHz trr Tj = 25°C IF = 10mA RL = 100Ω IR = 10mA h Tj = 25°C RL = 15KΩ CL = 300pF f = 45MHz Vi = 2V * Pulse test: tp ≤ 300µs Typ. Max. 7 irr = 1mA pF 5 80 Unit ns % δ < 2%. Fig. 1: Forward current versus forward voltage at different temperatures (typical values). 2/4 Min. C Fig. 2: Forward current versus forward voltage (typical values). ® BAT42 / BAT43 Fig. 3: Reverse current versus junction temperature (typical values). Fig. 4: Reverse current versus continuous reverse voltage. Fig. 5: Capacitance C versus reverse applied voltage VR (typical values). ® 3/4 BAT42 / BAT43 PACKAGE MECHANICAL DATA DO-35 REF. C O /D A C O / B O /D DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 D 0.458 1.102 0.558 0.018 0.022 Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 ®