BC108

BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter BC107 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C St orage Temperature Max. Operating Junction Temperature o Value BC108 30 20 5 100 0.3 0.75 -55 to 175 175 50 45 6 Unit V V V mA W W o o C C 1/6 November 1997 BC107/BC108 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 200 500 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BC107 V CB = 40 V V CB = 40 V for BC108 V CB = 20 V V CB = 20 V I C = 10 µ A for BC107 for BC108 I C = 10 mA for BC107 for BC108 I E = 10 µ A for BC107 for BC108 I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 I C = 10 µ A for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 IB = 0.5 mA I B = 5 mA IB = 0.5 mA I B = 5 mA VCE = 5 V V CE = 5 V VCE = 5 V Gr. A Gr. B Gr. A Gr. B Gr. C V CE = 5 V Gr. A Gr. B Gr. A Gr. B Gr. C 110 110 200 110 110 200 420 120 90 150 120 90 150 270 250 190 300 370 190 300 500 2 450 220 450 800 220 450 800 550 Min. Typ . Max. 15 15 15 15 50 30 45 20 6 5 70 200 750 950 650 700 700 770 250 600 Un it nA µA µA µA V V V V V V mV mV mV mV mV mV T ca s e = 150 C o o T ca s e = 150 C V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE∗ 40 40 100 h fe ∗ Small Signal Current Gain I C = 2 mA V CE = 5 V f = 1KHz for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C I C = 10 mA VCE = 10 V f = 100 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/6 BC107/BC108 ELECTRICAL CHARACTERISTICS (continued) Symb ol C CBO C EBO NF hie Parameter Collector Base Capacitance Emitter Base Capacitance Noise Figure Input Impedance IE = 0 IC = 0 Test Cond ition s V CB = 10 V V EB = 0.5 V f = 1MHz f = 1MHz Min. Typ . 4 12 2 10 Max. 6 Un it pF pF dB I C = 0.2 mA V CE = 5 V B = 200Hz f = 1KHz R g = 2K Ω I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 V CE = 5 V Gr. A Gr. B Gr. A Gr. B Gr. C V CE = 5 V Gr. A Gr. B Gr. A Gr. B Gr. C V CE = 5 V Gr. A Gr. B Gr. A Gr. B Gr. C f = 1KHz f = 1KHz f = 1KHz 4 3 4.8 5.5 3 4.8 7 2.2 1.7 2.7 3.1 1.7 2.7 3.8 30 13 26 30 13 26 34 KΩ KΩ KΩ KΩ KΩ KΩ KΩ 10 -4 -4 10 10 -4 -4 10 -4 10 -4 10 -4 10 µS µS µS µS µS µS µS hre Reverse Voltage Ratio h oe Output Admittance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % DC Normalized Current Gain. Collector--emitter Saturation Voltage. 3/6 BC107/BC108 Collector-base Capacitance. Transition Frequency. Power Rating Chart. 4/6 BC107/BC108 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/6 BC107/BC108 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6