BC141

BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T amb ≤ 45 C o at T case ≤ 45 C St orage Temperature Max. Operating Junction Temperature o Value 100 60 7 1 0.1 0.65 3.7 -55 to 175 175 Unit V V V A A W W o o C C 1/5 November 1997 BC141 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 35 200 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Test Cond ition s V CE = 60 V V CE = 60 V I C = 100 µA T amb = 150 oC 100 Min. Typ . Max. 100 100 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain I C = 30 mA 60 V I E = 100 µ A 7 V I C = 100 mA I C = 500 mA IC = 1 A IC = 1 A I C = 100 µA for BC141 for BC141 Gr. for BC141 Gr. for BC141 Gr. I C = 100 mA for BC141 for BC141 Gr. for BC141 Gr. for BC141 Gr. IC = 1 A for BC141 for BC141 Gr. for BC141 Gr. for BC141 Gr. I C = 50 mA IE = 0 IB = 10 mA IB = 50 mA IB = 100 mA V CE = 1 V VCE = 1 V 6 10 16 V CE = 1 V 6 10 16 V CE = 1 V 6 10 16 VCE = 10 V f = 1MHz 50 40 40 63 100 0.1 0.35 0.6 1.25 1 1.8 V V V V V BE(on) ∗ h FE∗ 75 28 40 90 140 63 100 160 26 15 20 30 MHz 12 25 250 850 pF ns ns 250 100 160 250 fT C CBO t on t of f Transition F requency Collector Base Capacitance Turn-on T ime Turn-off T ime V CB = 5 V I C = 100 mA I C = 100 mA IB1 = 5 mA I B1 = I B2 = 5 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 BC141 Collector-emitter Saturation Voltage. Base-emitter Voltage. DC Curent Gain. Transiition Frequency. 3/5 BC141 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 BC141 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5