BC177

BC177 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The NPN complement is BC107. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T amb ≤ 25 C St orage Temperature Max. Operating Junction Temperature o Value -50 -45 -5 -100 -200 0.3 -65 to 175 175 Unit V V V mA mA W o o C C 1/6 November 1997 BC177 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 200 500 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES V (BR)CES Parameter Collector Cut-off Current (V BE = 0) Collector-Emitter Breakdown Voltage (V BE = 0) Test Cond ition s V CE =-20 V V CE =-20 V I C = -10 µ A Tamb = 150 o C -50 Min. Typ . -1 Max. -100 -10 Un it nA µA V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage Small Signal Current Gain Transition F requency Collector Base Capacitance Noise Figure Input Impedance I C = -2 mA -45 V I E = -10 µ A -5 V V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ hfe ∗ I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -2 mA Gr. A Gr. B I B = -0.5 mA IB = -5 mA I B = -0.5 mA IB = -5 mA VCE = -5 V V CE = -5 V f = 1KHz -550 -75 -200 -720 -860 -640 -250 mV mV mV mV -750 mV 125 240 200 5 2 260 500 MHz pF 10 dB fT C CBO NF hie I C = -10 mA V CE = -5 V f = 100 MHz IE = 0 V CB = -10 V I C = -0.2 mA V CE = -5 V f = 1KHz R g = 2K Ω B = 200Hz I C = -2 mA Gr. A Gr. B I C = -2 mA Gr. A Gr. B I C = -2 mA Gr. A Gr. B V CE = -5 V f = 1KHz 2.7 5.2 V CE = -5 V f = 1KHz 2.7 4.5 V CE = -5 V f = 1KHz 25 35 KΩ KΩ 10 -4 10 µS µS -4 hre Reverse Voltage Ratio h oe Output Admittance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/6 BC177 DC Transconductance. DC Normalized Current Gain. Collector-emitter Saturation Voltage. Normalized h Parameters. Normalized h Parameters. Collector-base Capacitance. 3/6 BC177 Transition Frequency. Power Rating Chart. 4/6 BC177 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/6 BC177 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6