BC847

BC847 SMALL SIGNAL NPN TRANSISTORS Type BC847B s Marking 1F s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENT IS BC857 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 50 50 45 6 0.1 0.2 0.2 0.2 300 -65 to 150 150 Uni t V V V V A A A A mW o o C C October 1997 1/4 BC847 THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA µA V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency Collector Base Capacitance Collector Emitter Capacitance Noise Figure Input Impedance Reverse Voltage Ratio Small Signal Current Gain Output Admittance I C = 10 µ A 50 V I C = 2 mA 45 V I C = 10 µ A 6 V V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE∗ fT C CB C EB NF h i e∗ h re∗ h fe ∗ h oe∗ I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 10 mA I C = 10 µ A I C = 2 mA IE = 0 IC = 0 IB = 0.5 mA I B = 5 mA IB = 0.5 mA I B = 5 mA V CE = 5 V VCE = 5 V V CE = 5 V V CE = 5 V 0.58 0.09 0.2 0.75 0.9 0.63 0.7 150 290 300 0.25 0.6 V V V V 0.7 0.77 450 V V 200 I C = 10 mA VCE = 5 V f = 100MHz V CB = 10 V V EB = 0.5 V f = 1 MHz f = 1 MHz MHz 4.5 pF pF 10 8.5 dB KΩ 10 -4 9 2 3.2 4.5 2 330 30 60 V CE = 5 V I C = 0.2 mA f = 1KHz ∆ f = 200 Hz R G = 2 K Ω V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V I C = 2 mA I C = 2 mA I C = 2 mA I C = 2 mA f = 1KHz f = 1KHz f = 1KHz f = 1KHz µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 BC847 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BC847 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4