BC847C

® BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC847B BC847C s Marking 1F 1G s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Total Dissipation at T C = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 50 45 6 100 200 250 -65 to 150 150 Unit V V V mA mA mW o o C C June 2002 1/4 BC847B / BC847C THERMAL DATA R thj-amb • T hermal Resistance Junction-Ambient 2 Max 500 o C/W • Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Base Breakdown Voltage (I E = 0 ) Test Conditions V CB = 3 0 V V CB = 3 0 V V EB = 5 V IC = 10 µA 50 T C = 1 50 o C Min. Typ. Max. 15 5 100 Unit nA µA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0 ) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain IC = 2 mA 45 V IE = 10 µA 6 V V CE(sat) ∗ V BE(sat) ∗ V BE(on) ∗ h FE ∗ I C = 1 0 mA I C = 1 00 mA I C = 1 0 mA I C = 1 00 mA IC = 2 mA I C = 1 0 mA IC = 10 µA for B C847B for B C847C IC = 2 mA for B C847B for B C847C IE = 0 I B = 0 .5 mA IB = 5 mA I B = 0 .5 mA IB = 5 mA V CE = 5 V V CE = 5 V V CE = 5 V 0.58 0.09 0.2 0.7 0.9 0.66 0.25 0.6 V V V V 0.7 0.77 V V 150 270 V CE = 5 V 200 420 100 2.5 2 10 290 520 450 800 MHz pF dB fT C CBO NF Transition Frequency Collector-Base Capacitance Noise Figure I C = 1 0 mA V CE = 5 V f = 1 00MHz V CB = 1 0 V f = 1 MHz V CE = 5 V IC = 0 .2 mA f = 1KHz ∆ f = 200 Hz R G = 2 K Ω ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 BC847B / BC847C SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BC847B / BC847C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4