BCP52

BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS ARE BCP55 AND BCP56 RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP52 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1 K Ω ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature -60 -60 -60 -5 -1 -1.5 -0.1 -0.2 2 -65 to 150 150 Value BCP53 -100 -80 -100 V V V V A A A A W o o Unit C C 1/4 October 1997 BCP52/53 THERMAL DATA R thj-amb • R thj-tab • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0 ) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = - 30 V V CB = - 30 V I C = - 100 µ A for B CP52 for B CP53 I C = - 20 mA for B CP52 for B CP53 I C = - 100 µ A for B CP52 for B CP53 I C = - 10 µ A T j = 1 25 o C -60 -100 -60 -80 -60 -100 -5 Min. Typ. Max. -100 -10 Unit nA µA V V V V V V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER Collector-Emitter Breakdown Voltage (R BE = 1 K Ω ) Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain V (BR)EBO V CE(sat) ∗ V BE(on) ∗ h FE ∗ I C = - 500 mA I C = - 500 mA IC IC IC IC IC = = = = = - 5 mA - 150 mA - 150 mA - 150 mA - 500 mA I B = - 50 mA V CE = -2 V V CE = V CE = V CE = V CE = V CE = -2 V -2 V for Gr. 6 -2 V for Gr. 10 -2 V for Gr. 16 -2 V f = 35 MHz 25 40 63 100 25 50 -0.5 -1 V V 100 160 250 MHz fT Transition Frequency I C = - 10 mA V CE = - 5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 BCP52/53 SOT-223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 3/4 BCP52/53 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4