BCW66F

BCW66 SMALL SIGNAL NPN TRANSISTORS Type BCW66F BCW 66G BCW 66H s Marking EF EG EH s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENT IS BCW68 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 75 45 5 0.8 1 0.1 360 -65 to 150 150 Uni t V V V A A A mW o o C C October 1997 1/4 BCW66 THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 375 278 o o C/W C/W • Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CE = Rated V CES V CE = Rated V CES V EB = 4 V I C = 10 mA 45 V V I C = 10 µ A 75 V V I C = 10 µ A 5 V T amb = 150 oC Min. Typ . Max. 20 20 20 Un it nA µA nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V EB = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain V CE(sat )∗ V BE(s at)∗ h FE∗ I C = 100 mA I C = 500 mA I C = 100 mA I C = 500 mA I C = 0.1 mA for g rou p F for g rou p G for g rou p H I C = 10 mA for g rou p F for g rou p G for g rou p H I C = 100 mA for g rou p F for g rou p G for g rou p H I C = 500 mA for g rou p F for g rou p G for g rou p H I B = 10 mA I B = 50 mA I B = 10 mA I B = 50 mA VCE = 10 V 35 50 80 V CE = 1 V 75 110 180 V CE = 1 V 100 160 250 V CE = 2 V 35 60 100 100 0.3 0.7 1.25 2 V V V V 250 400 630 fT C CB C EB NF t on Transition F requency Collector Base Capacitance Emitter Base Capacitance Noise Figure Switching On Time I C = 20 mA VCE = 10V f = 100MHz IE = 0 IC = 0 V CB = 10 V V CE = 0.5 V f = 1 MHz f = 1 MHz MHz 12 80 2 10 100 pF pF dB ns V CE = 5 V I C = 0.2 mA f = 1KHz ∆ f = 200 Hz R G = 2 K Ω I C = 150 mA R L = 150 Ω I B1 = -I B2 =15 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 BCW66 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW66 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4