BCW69

BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type BCW 69 BCW 70 s Marking H1 H2 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V CBO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -50 -45 -50 -5 -0.1 -0.2 300 -65 to 150 150 Unit V V V V A A mW o o C C 1/4 BCW69/BCW70 THERMAL DATA R t hj- amb • Thermal Resistance Junction-Ambient Max 420 o C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -20 V V CB = -20 V I C = -10 µ A T j = 100 C -50 o Min. Typ . Max. -100 -10 Un it nA µA V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter O n Voltage DC Current G ain I C = -2 mA -45 V I C = -10 µ A -50 V I E = -10 µ A -5 V V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE∗ I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA I C = -2 mA for BCW 69 I C = -10 µ A I C = -2 mA for BCW 70 I C = -10 µ A I C = -2 mA IE = 0 IB = -0.5 mA IB = -2.5 mA IB = -0.5 mA IB = -2.5 mA VCE = -5 V -0.6 -0.3 -0.18 -0.72 -0.81 -0.75 V V V V V V CE = -5 V V CE = -5 V V CE = -5 V V CE = -5 V f = 1MHz f = 1KHz 90 120 150 215 150 7 10 500 MHz dB dB 260 fT C CB NF Transition F requency Collector Base Capacitance Noise Figure I C = -10 mA V CE = -5 V f = 100 MHz VCB = -10 V I C = -0.2mA ∆ f = 200 Hz V CE = -5 V R g = 2K Ω ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 BCW69/BCW70 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW69/BCW70 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4