BCY58

B CY58 BCY59 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol V CES V CEO V EBO IC IB Pt o t T s t g, T j January 1989 Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 45 °C Storage and Junction Temperature BCY58 32 32 7 200 50 0.39 1 – 65 to 200 BCY59 45 45 Unit V V V mA mA mW W °C 1/6 BCY58-BCY59 T HERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 150 450 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CE S Parameter Collector Cutoff Current (V BE = 0) Test Conditions For BCY58 V CE = 32 V V CE = 32 V For BCY59 V CE = 45 V V CE = 45 V For BCY58 V CE = 32 V For BCY59 V CE = 45 V V EB = 5 V I C = 2 mA I E = 10 µA I C = 10 mA I C = 100 mA I C = 2 mA I C = 100 mA I C = 10 mA I C = 100 mA I C =10 µA I B = 0.25 mA I B = 2.5 mA V CE = 5 V V CE = 1 V I B = 0.25 mA I B = 2.5 mA V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X V CE = 1 V Gr.VII Gr.VIII Gr.IX Gr.X V CE =1 V Gr.VII Gr.VIII Gr.IX Gr.X 0.55 0.6 0.75 For BCY58 For BCY59 32 45 7 0.12 0.4 0.65 0.75 0.7 0.9 195 100 140 195 280 350 170 250 350 500 365 175 260 365 520 0.35 0.7 0.7 0.85 1.2 Min. Typ. Max. Unit T amb = 150 °C T amb = 150 °C 0.1 0.1 0.1 0.1 10 10 10 10 nA µA nA µA I CE X Collector Cutoff Current (V BE = – 0.2 V) T amb = 100 °C T amb = 100 °C 20 20 10 µA µA nA V V V V V V V V V I E BO V (BR)CE O * (BR)EBO * Emitter cutoff Current (I C = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-emitter Voltage Base-emitter Saturation Voltage DC Current Gain V CE( sat )* V BE V B E ( s at)* h F E* I C = 2 mA I C =10 mA I C =100 mA 20 40 100 120 120 180 250 380 80 80 120 160 240 40 40 45 60 60 630 220 310 460 630 * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/6 BCY58-BCY59 ELECTRICAL CHARACTERISTICS (continued) Symbol hfe Parameter Small Signal Current Gain Test Conditions I C = 2 mA f = 1 kHz V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X fT C EBO C CBO NF to n Transition Frequency Emitter-base Capacitance Collector-base Capacitance Noise Figure Turn-on Time I C =10 mA f = 100 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 0.2 mA R g = 2 kΩ I C = 10 mA I B1 = 1 mA I C = 100 mA I B1 = 10 mA V CE = 5 V 200 V E B = 0.5 V 11 V CB = 10 V 3.5 V CE = 5 V f = 1 kHz V CC = 10 V 85 V CC = 10 V 55 480 480 150 800 800 ns ns ns 150 ns 2 6 6 pF dB 15 pF MHz 125 125 175 250 350 250 350 500 700 Min. Typ. Max. Unit t off Turn-off Time I C = 10 mA V CC = 10 V I B1 = – I B2 = 1 mA I C = 100 mA V CC = 10 V I B1 = – I B2 = 10 mA * Pulsed : pulse duration = 300 µ s, duty cycle = 1 %. DC Current Gain. Collector-emitter Saturation Voltage. 3/6 BCY58-BCY59 Transition Frequency. Collector-base Capacitance. Noise Figure (f = 100 Hz). Noise Figure (f = 1 kHz). Noise Figure (f = 10 kHz). Noise Figure vs. Frequency. 4/6 BCY58-BCY59 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/6 BCY58-BCY59 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6