BD135

® BD135 BD139 NPN SILICON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are BD136 and BD140 respectively. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot P t ot T stg Tj Parameter BD135 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 o C Total Dissipation at Ta mb ≤ 25 C Storage T emperature Max. O perating Junction Temperature o Value BD139 80 80 5 1.5 3 0.5 12.5 1.25 -65 to 150 150 45 45 Uni t V V V A A A W W o o C C May 1999 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 10 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = 30 V V CB = 30 V V EB = 5 V I C = 30 mA for BD135 for BD139 I C = 0.5 A I C = 0.5 A I C = 5 mA I C = 0.5 A I C = 150 mA IB = 0.05 A VCE = 2 V V CE = 2 V VCE = 2 V V CE = 2 V 25 25 40 63 T C = 125 C o Min. Typ . Max. 0.1 10 10 Un it µA µA µA V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE ∗ h F E∗ Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain 45 80 0.5 1 V V V V 250 160 h FE h FE Groups I C = 150 mA VCE = 2 V for BD139 group 10 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 BD135 / BD139 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 3/4 BD135 / BD139 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4