BD138

BD136 BD138/BD140 PNP SILICON TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary NPN types are the BD135 BD137 and BD139. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot P t ot T stg Tj Parameter BD136 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Total Dissipation at T amb ≤ 25 o C Storage Temperature Max. O perating Junction Temperature o Value BD138 -60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150 150 BD140 -80 -80 -45 -45 Uni t V V V A A A W W o o C C June 1997 1/4 BD136/BD138/BD140 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 10 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = -30 V V CB = -30 V V EB = -5 V I C = -30 mA for BD136 for BD138 for BD140 I C = -0.5 A I C = -0.5 A I C = -5 mA I C = -0.5 A I C = -150 mA IB = -0.05 A V CE = -2 V VCE = -2 V V CE = -2 V V CE = -2 V 25 25 40 63 TC = 125 C o Min. Typ . Max. -0.1 -10 -10 Un it µA µA µA V CEO(sus )∗ Collector-Emitter Sustaining Voltage -45 -60 -80 -0.5 -1 V V V V V V CE(sat )∗ V BE ∗ h FE∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain 250 160 h FE h FE G roups I C = -150 mA V CE = -2 V for BD140 group 10 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/4 BD136/BD138/BD140 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 BD136/BD138/BD140 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4