BD237

BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC I CM P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Base Voltage (R BE = 1K Ω) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BD235 BD236 60 60 60 5 2 6 25 -65 to 150 150 BD237 BD238 100 100 80 Uni t V V V V A A W o o C C For PNP types voltage and current values are negative. September 1997 1/5 BD235/BD236/BD237/BD238 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rated V CEO V EB = 5 V I C = 100 mA for BD235/BD236 for BD237/BD238 IC = 1 A IC = 1 A I C = 150 mA IC = 1 A I C = 250 mA I C = 150 mA IB = 0.1 A V CE = 2 V VCE = 2 V V CE = 2 V VCE = 10 V VCE = 2 V 40 25 3 1.6 MHz Tc = 150 C o Min. Typ . Max. 0.1 2 1 Un it mA mA mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE ∗ h FE∗ fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain Transition frequency 60 80 0.6 1.3 V V V V hFE1 /h FE 2 ∗ Matched Pairs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves 2/5 BD235/BD236/BD237/BD238 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 BD235/BD236/BD237/BD238 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 4/5 BD235/BD236/BD237/BD238 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5