BD241A_00

® BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Collector-Base Voltage (R BE = 1 00 Ω ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 C Total Dissipation at T amb ≤ 2 5 o C Storage Temperature o Value BD241A BD242A 70 60 BD241B BD242B 90 80 5 3 5 1 40 2 -65 to 150 BD241C BD242C 115 100 Unit V V V A A A W W o C December 2000 1/4 BD241A/B/C/BD242A/B/C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.13 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = r ated V CEO for B D241A/BD242A for B D241B/BD242B for B D241C/BD242C V EB = 5 V I C = 3 0 mA for B D241A/BD242A for B D241B/BD242B for B D241C/BD242C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0 .5 A I C = 0 .5 A I B = 0 .6 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 1 0 V V CE = 1 0 V f = 1MHz f = 1KHz 25 10 3 20 V CE = 3 0 V V CE = 6 0 V V CE = 6 0 V Min. Typ. Max. 0.2 0.3 0.3 0.3 1 Unit mA mA mA mA mA I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage 60 80 100 1.2 1.8 V V V V V V CE(sat) ∗ V BE ∗ h FE ∗ h fe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. For the characteristics curves see TIP31/TIP32 series. 2/4 BD241A/B/C/BD242A/B/C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BD241A/B/C/BD242A/B/C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4