BD336

BD336 SILICON PNP POWER DARLINGTON TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s DESCRIPTION The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. It is inteded for use in audio output stages general amplifier and switching applications. 1 2 3 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 1 0ms) Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value -100 -100 -5 -6 -10 -0.15 60 -65 to 150 150 Unit V V V A A A W o o C C July 1997 1/4 BD336 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.08 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO V CE(sat) ∗ V BE ∗ h FE ∗ Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Test Conditions V CB = - 100 V V CB = - 100 V V CE = - 50 V V EB = -5 V IC = -3 A IC = -3 A I C = - 0.5 A IC = -3 A IC = -6 A IF = -3 A IC = -3 A V CE = -3 V f = 1MHz I B = - 12 mA V CE = - 3 V V CE = - 3 V V CE = - 3 V V CE = - 3 V 2700 750 400 -1.8 150 1 5 2 10 µs µs V T C = 1 50 C o Min. Typ. Max. -0.2 -2 -0.5 -5 -2 -2.5 Unit mA mA mA mA V V VF∗ hfe t on t off Parallel Diode Forward Voltage Small Signal Current Gain Turn on Time Turn off Time IC = -3 A V CC = - 30 V I B1 = - IB2 = - 12 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 BD336 SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H H2 2.15 4.15 3.8 2.54 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.100 0.084 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16 MIN. 0.291 0.413 0.028 0.019 0.04 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.444 0.035 0.030 0.106 0.05 0.629 DIM. C A F H H2 c1 b b1 e e3 D P032A 3/4 B BD336 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4