BD440

BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and BD442 respectively. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t ≤ 1 0 ms) Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature BD439 BD440 60 60 60 5 4 7 1 36 -65 to 150 150 Value BD441 BD442 80 80 80 V V V V A A A W o o Unit C C For PNP types voltage and current values are negative. May 1997 1/4 BD439/BD440/BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions for B D439/440 for B D441/442 for B D439/440 for B D441/442 V EB = 5 V I C = 1 00 mA for D B439/440 f or B D441/442 I B = 0 .2 A V CE = 5 V V CE = 1 V V CE = 5 V f or B D439/440 f or B D441/442 V CE = 1 V f or B D439/440 f or B D441/442 V CE = 1 V f or B D439/440 f or B D441/442 V CE = 1 V V CE = 1 V 3 0 .58 1.5 60 80 0.8 V CB = 6 0 V V CB = 8 0 V V CB = 6 0 V V CB = 8 0 V Min. Typ. Max. 100 100 100 100 1 Unit µA µA µA µA mA V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage IC = 2 A I C = 1 0 mA IC = 2 A I C = 1 0 mA h FE ∗ DC Current Gain 20 15 40 40 25 15 130 130 140 140 I C = 5 00 mA IC = 2 A h FE1 / h FE2 ∗ Matched Pair fT Transition frequency IC = 500 mA I C = 2 50 mA 1.4 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BD439/BD440/BD441/BD442 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 BD439/BD440/BD441/BD442 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4