BD536

® BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON POWER TRANSISTORS s BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector and Emitter Current Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature BD533 BD534 45 45 45 Value BD535 BD536 60 60 60 5 8 1 50 -65 to 150 150 BD537 BD538 80 80 80 V V V V A A W o o Unit C C For PNP types voltage and current values are negative. February 2003 1/4 BD533 BD534 BD535 DB536 BD537 BD538 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions for B D533/534 for B D535/536 for B D537/538 for B D533/534 for B D535/536 for B D537/538 V EB = 5 V I C = 1 00 mA for B D533/534 f or B D535/536 f or B D537/538 I B = 0 .2 A I B = 0 .6 A V CE = 2 V V CE = 5 V f or B D533/534 f or B D535/536 f or B D537/538 VCE = 2 V V CE = 2 V f or B D533/534 f or B D535/536 f or B D537/538 VCE = 1 V 20 20 15 40 25 25 15 3 12 MHz 45 60 80 0.8 0.8 1.5 V CB = 4 5 V V CB = 6 0 V V CB = 8 0 V V CE = 4 5 V V CE = 6 0 V V CE = 80 V Min. Typ. Max. 100 100 100 100 100 100 1 Unit µA µA µA µA µA µA mA V V V V V V I CES I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain IC = 2 A IC = 6 A IC = 2 A I C = 1 0 mA I C = 5 00 mA IC = 2 A fT Transition frequency I C = 5 00 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 BD533 BD534 BD535 DB536 BD537 BD538 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 3/4 BD533 BD534 BD535 DB536 BD537 BD538 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4