BDW93C

BDW93C BDW94B/BDW94C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 1 DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP Unit BDW93C BDW94B BDW94C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V IC ICM IB P tot Tstg Tj Collector Current 12 A Collector Peak Current 15 A Base Current 0.2 A 80 W Total Dissipation at T c ≤ 25 C Storage Temperature o Max. Operating Junction Temperature -65 to 150 o C 150 o C For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj-case Thermal Resistance Junction-case o 1.56 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Test Conditions Typ. Max. Unit for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = 100 V 100 100 µA µA V CB = 80 V VCB = 100 V 5 5 mA mA V CE = 80 V VCE = 100 V 1 1 mA mA 2 mA I CEO Collector Cut-off Current (I B = 0) for BDW94B for BDW93C/94C IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. I C = 100 mA for BDW94B for BDW93C/94C 80 100 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2 3 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2.5 4 V V DC Current Gain IC = 3 A IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V V CE = 3 V h FE ∗ V F* Parallel-diode Forward Voltage IF = 5 A I F = 10 A h fe Small Signal Current Gain IC = 1 A f = 1 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/6 1000 750 100 20K 1.3 1.8 V CE = 10 V 20 2 4 V V BDW93C/BDW94B/BDW94C Safe Operating Area DC Current Gain (NPN types) Collector Emitter Saturation Voltage (NPN types) DC Transconductance (NPN types) Collector Emitter Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types) 3/6 BDW93C/BDW94B/BDW94C Saturated Switching Characteristics (NPN types) Saturated Switching Characteristics (PNP types) Collector Emitter Saturation Voltage (PNP types) DC Current Gain (PNP types) DC Transconductance (PNP types) 4/6 BDW93C/BDW94B/BDW94C TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. inch 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BDW93C/BDW94B/BDW94C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6