BDX33B

® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 I NTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature BDX33B BDX34B 80 80 10 15 0.25 70 -65 to 150 150 BDX33C BDX34C 100 100 V V A A A W o o Un it C C For PNP types voltage and current values are negative. October 1999 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (I E = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/34C for BDX33B/34B for BDX33C/34C o T cas e = 100 C for BDX33B/34B for BDX33C/34C V EB = 5 V I C =100 mA for BDX33B/34B for BDX33C/34C 80 100 80 100 80 100 2.5 2.5 750 4 V CE = 5 V f = 1MHz 100 V CB = 80 V VCB = 100V VCB = 80 V V CB = 100 V V CE = 40 V V CE = 50V V CE = 40 V V CE = 50 V Min. Typ . Max. 0.2 0.2 5 5 0.5 0.5 10 10 5 Unit mA mA mA mA mA mA mA mA mA V V V V V V V V V V I CEO Collector Cut-off Current (I B = 0) IEBO Emitter Cut-off Current (I C = 0) V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (IB = 0) VCER(sus) ∗ Collector-emitter Sustaining Voltage (R BE =100 Ω) V CEV( su s) ∗ Collector-emitter Sustaining Voltage (V BE =-1.5 V) V CE(sat) ∗ V BE ∗ h FE∗ VF ∗ h fe Collector-emitter Saturation Voltage Base-emitter Voltage DC Current G ain Parallel-Diode Forward Voltage Small Signal Current Gain I C = 100 mA for BDX33B/34B for BDX33C/34C I C = 100 mA for BDX33B/34B for BDX33C/34C IC = 3 A IC = 3 A IC = 3 A IF = 8 A IC = 1 A I B = 6 mA V CE = 3 V V CE = 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 BDX33B BDX33C BDX34B BDX34C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BDX33B BDX33C BDX34B BDX34C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4