BF259

B F257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V E BO IC I CM Pt o t T stg Tj October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current Total Power Dissipation at T amb ≤ 50 °C Storage Temperature Junction Temperature 160 160 Value BF 257 BF258 BF25 9 250 250 5 100 200 5 – 55 to 200 200 300 300 V V V mA mA W °C °C 1/5 Unit BF257-BF258-BF259 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 30 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage DC Current Gain Transition Frequency Reverse Capacitance Test Conditions for BF257 for BF258 for BF259 I C = 100 µA V CB = 100 V V CB = 200 V V CB = 250 V for BF257 for BF258 for BF259 for BF257 for BF258 for BF259 160 250 300 160 250 300 5 Min. Typ. Max. 50 50 50 Unit nA nA nA V V V V V V V V (BR) CB O V ( BR) CEO * I C = 10 mA V (BR) EB O I E = 100 µA I C = 30 mA I C = 30 mA I C = 15 mA IC = 0 f = 1 MHz I B = 6 mA V CE = 10 V V CE = 10 V V CE = 30 V V CE (s at )* 1 25 90 3 V h FE * fT Cr e * MHz pF Pulsed : pulse duration = 300 µ s, duty cycle = 1 %. DC Current Gain. 2/5 BF257-BF258-BF259 Collector Cutoff Current. Collector-base Capacitance. Transition Frequency. Power Rating Chart. Safe Operating Area. 3/5 BF257-BF258-BF259 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 BF257-BF258-BF259 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5