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BFX34
SILICON NPN TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR
DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Total Dissipation at T case ≤ 2 5 C o T amb ≤ 2 5 C Storage Temperature
o
Value 120 60 6 5 5 0.87 -65 to 200 200
Unit V V V A W W
o o
C C
Max. Operating Junction Temperature
August 2001
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BFX34
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max 35 200
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 6 0 V V EB = 4 V IC = 5 mA 120 Min. Typ. 0.02 0.05 Max. 10 10 Unit µA µA V
V (BR)CBO ∗ Collector-base Breakdown Voltage (I E = 0 ) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V EBO
∗
I C = 1 00 mA
60
V
Emitter-base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
IE = 1 mA IC = 5 A IC = 5 A IC = 1 A I C = 1 .5 A IC = 2 A I C = 0 .5 A f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 0 .5 A I B1 = - IB2 = 0 .5 A I B = 0 .5 A I B = 0 .5 A V CE = 2 V V CE = 0 .6 V V CE = 2 V V CE = 5 V V EB = 0 .5 V V CB = 1 0 V
6 0.4 1.3 100 75 80 100 300 40 500 100 1 1.6
V V V
V CE(sat) ∗ V BE(sat) ∗ h FE ∗
40 70
150 MHz pF pF
fT
∗
Transition Frequency Emitter-base Capacitance Collector-base Capacitance RESISTIVE LOAD Turn-on Time Turn-off Time
C EBO C CBO
t on t off
V CC = 2 0 V
0.6 0.6
0.25 1.2
µs µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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BFX34
TO-39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
G I H
D
A
L
F
E
B
P008B
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BFX34
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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