BTA04 T/D/S/A
BTB04 T/D/S/A
®
SENSITIVE GATE TRIACS
A2
FEATURES
Very low IGT = 10mA max
Low IH = 15mA max
BTA Family:
Insulating voltage = 2500V(RMS)
(UL recognized: E81734)
■
■
G
■
A1
DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
s
b
O
Tl
c
u
d
o
r
P
TO-220AB
Parameter
(t s)
c
u
d
Unit
4
A
tp = 8.3ms
42
A
tp = 10ms
40
tp = 10ms
8
A2s
Repetitive
F = 50Hz
10
A/µs
Non repetitive
50
Tc = 90°C
BTB
Tc = 95°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
o
r
P
e
Value
BTA
Critical rate of rise of on-state current
Gate supply: IG = 50mA dIG/dt = 0.1A/µs
t
e
l
o
Tstg
Tj
G
e
t
le
o
s
b
O
-
RMS on-state current (360° conduction angle)
I2t value
dI/dt
A1
A2
)
s
t(
Storage and operating junction temperature range
Maximum lead soldering temperature during 10s at 4.5mm from case
-40 to +150
-40 to +110
°C
260
°C
BTA / BTB04Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage Tj = 110°C
September 2001 - Ed: 1A
Unit
400 T/D/S/A
600 T/D/S/A
700 T/D/S/A
400
600
700
V
1/6
BTA04 T/D/S/A
BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a)
Value
Unit
60
°C/W
BTA
4.4
°C/W
BTB
3.2
BTA
3.3
BTB
2.4
Junction to ambient
Rth (j-c) DC
Rth (j-c) AC
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs)
°C/W
VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB04
Symbol
IGT
Test conditions
VD = 12V (DC)
RL = 33Ω
Quadrant
Tj = 25°C
Unit
10
VD = VDRM
RL = 3.3kΩ
Tj =110°C
I - II - III - IV
MIN.
I - II - III - IV
TYP.
e
t
le
o
s
b
O
I - III - IV
TYP.
II
IH*
IT = 100mA Gate open
VTM *
ITM = 5.5A
IDRM
IRRM
VDRM rated
VRRM rated
dV/dt *
s
b
O
u
d
o
r
P
e
t
e
l
o
(dI/dt)c*
)
s
(
ct
tp = 380µs
Linear slope up to
VD = 67% VDRM gate open
(dI/dt)c = 1.8A/ms
Tj = 25°C
Tj = 25°C
MAX.
c
u
d
o
r
P
mA
1.5
V
0.2
V
2
µs
10
10
20
20
20
20
40
40
15
15
25
25
mA
mA
MAX.
1.65
V
Tj = 25°C
MAX.
0.01
mA
Tj = 110°C
MAX.
0.75
Tj = 110°C
TYP.
10
10
-
-
MIN.
-
-
10
10
TYP.
1
1
5
5
Tj = 110°C
* For either polarity of electrode A2 voltage with reference to electrode A1
2/6
25
5
VGD
Tj = 25°C
10
MAX.
MAX.
IG = 1.2IGT
10
IV
I - II - III - IV
IL
10
5
Tj = 25°C
Tj = 25°C
A
5
RL = 33Ω
VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
S
MAX.
VD = 12V (DC)
tgt
D
I - II - III
VGT
)
s
t(
T
V/µs
V/µs
BTA04 T/D/S/A
BTB04 T/D/S/A
PRODUCT INFORMATION
IT(RMS)
VDRM / VRRM
A
V
T
4
400
X
600
X
700
X
400
X
600
X
Sensitivity Specification
Package
BTA
(Insulated)
BTB
(Uninsulated)
D
S
A
X
X
X
X
X
ORDERING INFORMATION
BT
A
04
-
400
T
c
u
d
Triac
Series
)
s
t(
Sensitivity
Insulation:
A: insulated
B: non insulated
e
t
le
Current: 04A
)
s
(
ct
o
s
b
O
-
o
r
P
Voltage:
400: 400V
600: 600V
700: 700V
u
d
o
r
P
e
t
e
l
o
s
b
O
3/6
BTA04 T/D/S/A
BTB04 T/D/S/A
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temperature.
c
u
d
e
t
le
)
s
(
ct
r
P
e
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
t
e
l
o
Zth/Rth
s
b
O
Zth(j-c)
0.1
Zth(j-a)
tp(s)
0.01
1E-3
4/6
1E-2
1E-1
1E+0
1E+1
o
r
P
o
s
b
O
-
u
d
o
1
)
s
t(
1E+2 5E+2
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
BTA04 T/D/S/A
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
BTB04 T/D/S/A
Fig. 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t.
c
u
d
Fig. 9: On-state characteristics (maximum values).
e
t
le
)
s
(
ct
)
s
t(
o
r
P
o
s
b
O
-
u
d
o
r
P
e
t
e
l
o
s
b
O
5/6
BTA04 T/D/S/A
BTB04 T/D/S/A
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.
B
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
C
b2
A
15.20
a1
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
3.75
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88 0.024
0.034
b2
1.23
1.32 0.048
0.051
C
4.40
4.60 0.173
0.181
c1
0.49
0.70 0.019
0.027
c2
2.40
2.72 0.094
e
2.40
2.70 0.094
F
6.20
6.60 0.244
I
3.75
3.85 0.147
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95 0.104
0.116
l2
1.14
1.70 0.044
0.066
1.70 0.044
0.066
■
■
■
■
du
Ordering type
Marking
BTA/BTB04-xxxy
o
r
P
e
)
s
t(
0.107
uc
0.106
0.259
d
o
r
0.151
P
e
let
1.14
b
O
-
M
BTA/BTB04-xxxy
0.147
13.00
so
)
s
(
ct
0.625
a2
l3
OTHER INFORMATION
15.90 0.598
2.60
0.102
Package
Weight
Base qty
Delivery mode
TO-220AB
2.3 g
250
Bulk
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
t
e
l
o
s
b
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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6/6
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