BTA04-700TRG

BTA04 T/D/S/A BTB04 T/D/S/A ® SENSITIVE GATE TRIACS A2 FEATURES Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) ■ ■ G ■ A1 DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t s b O Tl c u d o r P TO-220AB Parameter (t s) c u d Unit 4 A tp = 8.3ms 42 A tp = 10ms 40 tp = 10ms 8 A2s Repetitive F = 50Hz 10 A/µs Non repetitive 50 Tc = 90°C BTB Tc = 95°C Non repetitive surge peak on-state current (Tj initial = 25°C) o r P e Value BTA Critical rate of rise of on-state current Gate supply: IG = 50mA dIG/dt = 0.1A/µs t e l o Tstg Tj G e t le o s b O - RMS on-state current (360° conduction angle) I2t value dI/dt A1 A2 ) s t( Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case -40 to +150 -40 to +110 °C 260 °C BTA / BTB04Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 110°C September 2001 - Ed: 1A Unit 400 T/D/S/A 600 T/D/S/A 700 T/D/S/A 400 600 700 V 1/6 BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Parameter Rth (j-a) Value Unit 60 °C/W BTA 4.4 °C/W BTB 3.2 BTA 3.3 BTB 2.4 Junction to ambient Rth (j-c) DC Rth (j-c) AC Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) °C/W VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Quadrant Tj = 25°C Unit 10 VD = VDRM RL = 3.3kΩ Tj =110°C I - II - III - IV MIN. I - II - III - IV TYP. e t le o s b O I - III - IV TYP. II IH* IT = 100mA Gate open VTM * ITM = 5.5A IDRM IRRM VDRM rated VRRM rated dV/dt * s b O u d o r P e t e l o (dI/dt)c* ) s ( ct tp = 380µs Linear slope up to VD = 67% VDRM gate open (dI/dt)c = 1.8A/ms Tj = 25°C Tj = 25°C MAX. c u d o r P mA 1.5 V 0.2 V 2 µs 10 10 20 20 20 20 40 40 15 15 25 25 mA mA MAX. 1.65 V Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 0.75 Tj = 110°C TYP. 10 10 - - MIN. - - 10 10 TYP. 1 1 5 5 Tj = 110°C * For either polarity of electrode A2 voltage with reference to electrode A1 2/6 25 5 VGD Tj = 25°C 10 MAX. MAX. IG = 1.2IGT 10 IV I - II - III - IV IL 10 5 Tj = 25°C Tj = 25°C A 5 RL = 33Ω VD = VDRM IG = 40mA dIG/dt = 0.5A/µs S MAX. VD = 12V (DC) tgt D I - II - III VGT ) s t( T V/µs V/µs BTA04 T/D/S/A BTB04 T/D/S/A PRODUCT INFORMATION IT(RMS) VDRM / VRRM A V T 4 400 X 600 X 700 X 400 X 600 X Sensitivity Specification Package BTA (Insulated) BTB (Uninsulated) D S A X X X X X ORDERING INFORMATION BT A 04 - 400 T c u d Triac Series ) s t( Sensitivity Insulation: A: insulated B: non insulated e t le Current: 04A ) s ( ct o s b O - o r P Voltage: 400: 400V 600: 600V 700: 700V u d o r P e t e l o s b O 3/6 BTA04 T/D/S/A BTB04 T/D/S/A Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. c u d e t le ) s ( ct r P e Fig. 5: Relative variation of thermal impedance versus pulse duration. t e l o Zth/Rth s b O Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 4/6 1E-2 1E-1 1E+0 1E+1 o r P o s b O - u d o 1 ) s t( 1E+2 5E+2 Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. BTA04 T/D/S/A Fig. 7: Non repetitive surge peak on-state current versus number of cycles. BTB04 T/D/S/A Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. c u d Fig. 9: On-state characteristics (maximum values). e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/6 BTA04 T/D/S/A BTB04 T/D/S/A PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B Millimeters Inches Min. Typ. Max. Min. Typ. Max. C b2 A 15.20 a1 L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e 3.75 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 e 2.40 2.70 0.094 F 6.20 6.60 0.244 I 3.75 3.85 0.147 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 1.70 0.044 0.066 ■ ■ ■ ■ du Ordering type Marking BTA/BTB04-xxxy o r P e ) s t( 0.107 uc 0.106 0.259 d o r 0.151 P e let 1.14 b O - M BTA/BTB04-xxxy 0.147 13.00 so ) s ( ct 0.625 a2 l3 OTHER INFORMATION 15.90 0.598 2.60 0.102 Package Weight Base qty Delivery mode TO-220AB 2.3 g 250 Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. 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