BTA10-600B

www.DataSheet4U.com B TA10 B/C BTB10 B/C STANDARD TRIACS . . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter BTA BTB Tc = 90 °C Tc = 95 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 BTA / BTB10-... B/C 600 600 700 700 800 800 V 105 100 50 10 50 - 40 to + 150 - 40 to + 125 260 °C °C °C A2s A/µs A Value 10 Unit A A1 A2 G TO220AB (Plastic) ITSM I2t dI/dt Symbol Unit www.DataSheet4U.com March 1995 1/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 3.9 3.1 2.9 2.3 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant B IGT VD=12V (DC) RL =33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 14A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX MIN 250 MAX MAX MAX MIN TYP TYP 40 70 50 1.5 0.01 0.5 100 V/µs 50 100 1.5 0.2 2 20 35 25 mA V mA Suffix C 25 50 V V µs mA mA Unit VD=VDRM R L=3.3k Ω VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT Linear slope up to VD =67%VDRM gate open (dI/dt)c = 4.4A/ms (dV/dt)c * Tj=110°C MIN 10 5 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. www.DataSheet4U.com 2/5 www.DataSheet4U.com www.DataSheet4U.com BTA10 B/C / BTB10 B/C ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 10 VDRM / VRRM V 400 600 700 800 BTB (Uninsulated) 400 600 700 800 B X X X X X X X X Sensitivity Specification C X X X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). P (W) Tcase (o C) Rth = 0 o C/W 2.5 o C/W 5 o C/W 7.5 o C/W P(W) 14 12 10 8 6 4 2 0 0 1 180 O 14 -85 -90 -95 -100 -105 -110 = 180 = 120 = 90 = 60 = 30 o o o o o 12 10 8 6 4 -115 Tamb ( C) o I T(RMS) (A) 2 3 4 5 6 7 8 9 10 2 0 0 20 -120 60 80 100 120 -125 140 40 Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). P (W) Tcase (o C) Rth = 0 o C/W o 2.5 C/W o Fig.4 : RMS on-state current versus case temperature. 14 12 10 8 6 4 2 Tamb ( C) o -90 -95 -100 -105 I T(RMS) (A) 12 10 BTA BTB 5 C/W 7.5 o C/W 8 6 -110 -115 -120 20 40 60 80 100 120 -125 140 4 2 = 180 o Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 o 0 0 www.DataSheet4U.com 3/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). www.DataSheet4U.com 4/5 www.DataSheet4U.com BTA10 B/C / BTB10 B/C PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. www.DataSheet4U.com 5/5