BTA10-600CRG

BTA10, BTB10 T1035, T1050 Datasheet 10 A Snubberless™, logic level and standard Triacs Features A2 • • • • G A1 A2 A2 G A1 A1 TO-220AB A2 G TO-220AB Ins. A2 D²PAK A2 A1 • • Medium current Triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q) or very high commutation (3Q, Snubberless™) capability BTA series UL1557 certified (file ref: 81734) Packages are RoHS (2002/95/EC) compliant Description Available either in through-hole or surface mount packages, the BTA10, BTB10 and T10xx Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating regulation or induction motor starting circuit. They are also recommended for phase control operations in light dimmers and appliance motors speed controllers. G The Snubberless™ versions (W suffix and T10xx) are especially recommended for use on inductive loads, because of their high commutation performance. By using an internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at 2500 VRMS) complying with UL standards (file reference: E81734). Product status link BTA10, BTB10, T1035, T1050 Product summary IT(RMS) 10 A VDRM/VRRM 600 and 800 V IGT 25 to 50 mA DS3165 - Rev 9 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com BTA10, BTB10, T1035, T1050 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters IT(RMS) RMS on-state current (full sine wave) ITSM I2t Tc = 95 °C F = 60 Hz tp = 16.7 ms 105 I2t value for fusing tp = 10 ms A 55 A2s F = 120 Hz Tj = 125 °C 50 A/µs tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction temperature range -40 to +150 °C Operating junction temperature range -40 to +125 °C Average gate power dissipation Tj A 100 Peak gate current Tstg 10 tp = 20 ms VDSM/VRSM Non repetitive surge peak off-state voltage PG(AV) TO-220AB Ins. F = 50 Hz IG = 2 x IGT , tr ≤ 100 ns IGM Tc = 105 °C Unit Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) Critical rate of rise of on-state current dl/dt TO-220AB Value Table 2. Static electrical characteristics Symbol Tj Test conditions Value Unit VT(1) ITM = 14 A, tp = 380 µs 25 °C Max. 1.55 V VTO threshold on-state voltage 125 °C Max. 0.85 V RD Dynamic resistance 125 °C Max. 40 mΩ 5 µA 1 mA IDRM/IRRM 25 °C VDRM = VRRM Max. 125 °C 1. For both polarities of A2 referenced to A1 Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants) Symbol IGT Quadrant T1035 BTB10-xCW BTA10-xBW Unit BTB10-xBW Max. I - II - III Max. 1.3 V VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V IH IT = 500 mA I - II - III Max. 35 50 IL IG = 1.2 IGT I - III Max. 50 70 II Max. VGD dV/dt(2) VD = 12 V, RL = 33 Ω VD = 67 % VDRM gate open, Tj = 125 °C Min. 35 T1050 I - II - III VGT DS3165 - Rev 9 Parameters BTA10-xCW 80 50 60 500 80 1000 mA mA mA V/µs page 2/12 BTA10, BTB10, T1035, T1050 Characteristics Symbol Parameters Quadrant (dI/dt)c(2) Without snubber, Tj = 125 °C BTA10-xCW T1035 BTB10-xCW Min. T1050 BTA10-xBW Unit BTB10-xBW 5.5 9 A/ms 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1 Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard Triac (4 quadrants) Symbol IGT(1) Parameters (2) IH IL dV/dt(2) (dV/dt)c(2) C B Unit I - II - III Max. 25 50 IV Max. 50 100 All Max. 1.3 V VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V IT = 500 mA I - II - III Max. 25 50 I - III Max. 40 50 II Max. 80 100 VD = 67 % VDRM gate open, Tj = 125 °C Min. 200 400 V/µs (dI/dt)c = 4.4 A/ms, Tj = 125 °C Min. 5 10 V/µs Value Unit VD = 12 V, RL = 33 Ω VGT VGD Value Quadrant IG = 1.2 IGT mA mA mA 1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Rth(j-c) (typ.) Rth(j-a) (max.) Parameters Junction to case (AC) Junction to ambient (S(1) = 2 cm²) Junction to ambient TO-220AB / D²PAK 1.5 TO-220AB insulated 2.4 D²PAK 45 TO-220AB / TO-220AB ins 60 °C/W 1. Copper surface under tab. DS3165 - Rev 9 page 3/12 BTA10, BTB10, T1035, T1050 Characteristics (curves) 1.1 Characteristics (curves) Figure 2. Maximum power dissipation versus on-state RMS current (full cycle) Figure 3. RMS on-state current versus case temperature (full cycle) I T(RMS) (A) P(W) 13 12 12 11 11 10 9 8 7 10 9 8 BTB/T10 BTA 7 6 6 5 5 4 4 3 2 3 2 1 0 1 2 3 4 6 5 Tc(°C) 1 IT(RMS)(A) 0 7 8 9 10 Figure 4. Relative variation of thermal impedance versus pulse duration 0 0 25 50 75 100 125 Figure 5. On-state characteristics (maximum values) ITM(A) K = [Zth/Rth] 1E+0 100 Tj = Tj max. Tj max. Vto = 0.85 V Rd = 40 mΩ Zth(j-c) Zth(j-a) 10 Tj = 25 °C 1E-1 1E-3 1E-2 1E-1 1E+0 VTM(V) 1 tp(s) 1E-2 1E+1 1E+2 5E+2 Figure 6. Surge peak on-state current versus number of cycles 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 7. Non repetitive surge peak on-state current versus sinusoidal pulse width (tP < 10 ms) ITSM(A) 110 100 90 80 70 60 50 40 30 20 10 0 ITSM(A) 1000 Tj initial=25°C t=20ms Non repetitive Tj initial=25°C ITSM dI/dt limitation: 50A/µs One cycle 100 Repetitive TC=95°C Number of cycles 1 DS3165 - Rev 9 10 100 1000 10 0.01 t p (ms) 0.10 1.00 10.00 page 4/12 BTA10, BTB10, T1035, T1050 Characteristics (curves) Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dl/dt)c [(dV/dt)c / specified (dl/dt)c IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C] 2.5 2.0 1.8 2.0 C 1.6 IGT B 1.4 1.5 1.2 1.0 BW/CW/T10xx 1.0 IH and IL 0.8 0.5 0.6 0.0 -40 Tj (°C) -20 0 20 40 (dV/dt)c (V/µs) 0.4 60 80 100 120 0.1 140 Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature (dl/dt)c [Tj] / (dl/dt)c [Tj = 125 °C] 1.0 10.0 100.0 Figure 11. D²PAK thermal resistance junction to ambient versus copper surface under tab 80 Rth(j-a) (°C/W) D²PAK 6 70 5 Epoxy printed board FR4, copper thickness = 35 µm 60 4 50 3 40 30 2 20 1 0 10 Tj(°C) 0 DS3165 - Rev 9 25 50 75 100 125 SCu (cm²) 0 0 5 10 15 20 25 30 35 40 page 5/12 BTA10, BTB10, T1035, T1050 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 D²PAK package information Figure 12. D²PAK package outline A E E1 E2 H D D1 L2 c2 2 3 D2 L3 1 b2 b e Max resin gate protrusion: 0.5 mm (1) G A1 A2 A3 L R Gauge Plane V2 c (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. Table 6. D²PAK package mechanical data Dimensions Ref. Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 DS3165 - Rev 9 Inches(1) Millimeters 0.25 0.0098 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 page 6/12 BTA10, BTB10, T1035, T1050 D²PAK package information Dimensions Ref. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 0.0689 R V2 0.1 0.40 0° 0.0157 8° 0° 8° 1. Dimensions in inches are given for reference only Figure 13. D²PAK recommended footprint (dimensions are in mm) 16.90 10.30 5.08 1.30 8.90 DS3165 - Rev 9 3.70 page 7/12 BTA10, BTB10, T1035, T1050 TO-220AB non ins. and insulated package information 2.2 TO-220AB non ins. and insulated package information Figure 14. TO-220AB non ins. and insulated package outline C B b2 I Resin gate 0.5 mm max. protusion(1) L F A I4 l3 c2 a1 l2 a2 M b1 e c1 Resin gate 0.5 mm max. protusion(1) (1)Resin gate position accepted in one of the two positions or in the symmetrical opposites. Table 7. TO-220AB non ins. and insulated package mechanical data Dimensions Millimeters Ref. Min. A 15.20 a1 DS3165 - Rev 9 Typ. Inches1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 page 8/12 BTA10, BTB10, T1035, T1050 TO-220AB non ins. and insulated package information Dimensions Ref. Millimeters Min. Typ. Inches1 Max. Min. Typ. Max. c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS3165 - Rev 9 page 9/12 BTA10, BTB10, T1035, T1050 Ordering information 3 Ordering information Figure 15. BTA10 and BTB10 series ordering information scheme BT A 10 - 600 BW RG Triac Insulation A = Insulated B = Non-insulated Current 10 = 10 A Voltage 600 = 600 V 800 = 800 V Sensitivity and type B = 50 mA standard C = 25 mA standard BW = 50 mA Snubberless™ CW = 35 mA Snubberless™ Packing mode RG = Tube Figure 16. T10xx series ordering information scheme T 10 50 - 8 G - TR Triac Current 10 = 10 A Sensitivity 50 = 50 mA 35 = 35 mA Voltage 800 V 600 V Package G = D²PAK Packing mode (blank) = Tube -TR = Tape and reel Table 8. Ordering information DS3165 - Rev 9 Order code Marking BTA10-600BRG BTA10-600B BTA10-600CRG BTA10-600C BTA10-600BWRG BTA10-600BW BTA10-600CWRG BTA10-600CW BTA10-800BWRG BTA10-800BW BTA10-800CWRG BTA10-800CW BTB10-600BWRG BTB10-600BW BTB10-800BWRG BTB10-800BW T1035-6G T1035-6G T1050-8G T1050-8G T1035-6G-TR T1035-6G T1050-8G-TR T1050-8G Package Weight Base qty. Delivery mode 50 Tube 1000 Tape and reel 13" TO-220AB Ins. 2.3 g TO-220AB D²PAK 1.50 g page 10/12 BTA10, BTB10, T1035, T1050 Revision history Table 9. Document revision history Date Revision Sep-2002 5A 13-Feb-2006 6 TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. 06-Feb-2017 7 Added D²PAK package information. 8 Updated Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants), Section 3 Ordering information and Section 2.1 D²PAK package information. 15-Mar-2018 Changes Last update. Added RPNs T1035 and T1050. 01-Mar-2019 DS3165 - Rev 9 9 Updated Links syntax. page 11/12 BTA10, BTB10, T1035, T1050 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS3165 - Rev 9 page 12/12