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BTA12-700BRG

BTA12-700BRG

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    TRIAC 700V 12A TO220AB

  • 详情介绍
  • 数据手册
  • 价格&库存
BTA12-700BRG 数据手册
BTA12, BTB12 and T12 Series ® 12A TRIACS SNUBBERLESS™, LOGIC LEVEL & STANDARD Table 1: Main Features A2 Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q1) 5 to 50 mA G A1 A2 A2 A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA12, BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). July 2005 G A1 A2 G I2PAK (T12-R) D2PAK (T12-G) A2 A1 A2 G TO-220AB Insulated (BTA12) Table 2: Order Codes Part Number BTA12-xxxxxRG BTB12-xxxxxRG T12xx-xxxG T12xx-xxxG-TR T12xx-xxxR REV. 8 A1 A2 G TO-220AB (BTB12) Marking See page table 8 on page 9 1/10 BTA12, BTB12 and T12 Series Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I²t dI/dt Parameter I2PAK/D2PAK/ TO-220AB RMS on-state current (full sine wave) PG(AV) Tstg Tj Unit 12 A Tc = 105°C TO-220AB Ins. Tc = 90°C Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25°C) F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms voltage IGM Value tp = 20 µs Peak gate current Average gate power dissipation t = 20 ms 120 t = 16.7 ms 126 A 78 A²s Tj = 125°C 50 A/µs Tj = 25°C VDRM/VRRM + 100 V Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Storage junction temperature range Operating junction temperature range Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS and Logic Level (3 quadrants) Symbol IGT (1) VGT VD = 12 V RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT dV/dt (2) BTA12 / BTB12 T1205 T1235 35 SW CW BW 5 10 35 50 MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V 35 10 15 35 50 10 50 10 25 50 70 15 60 15 30 60 80 VD = 67 %VDRM gate open MIN. Tj = 125°C 20 500 20 40 500 1000 (dV/dt)c = 0.1 V/µs Tj = 125°C 3.5 3.5 6.5 1 1 2.9 Without snubber Tj = 125°C Unit I - II - III MAX. 5 TW 10 (dV/dt)c = 10 V/µs (dI/dt)c (2) T = 125°C j 2/10 T12 Test Conditions Quadrant I - III II MAX. MIN. 6.5 mA mA mA V/µs A/ms 6.5 12 BTA12, BTB12 and T12 Series ■ Standard (4 quadrants) Symbol Quadrant MAX. RL = 30 Ω I - II - III IV ALL MAX. 1.3 V ALL MIN. 0.2 V IGT (1) VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL dV/dt (2) BTA12 / BTB12 Test Conditions I - III - IV IG = 1.2 IGT C B 25 50 50 100 Unit mA MAX. 25 50 mA MAX. 40 50 mA 80 100 II VD = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs Tj = 125°C MIN. 5 10 V/µs (dV/dt)c (2) (dI/dt)c = 5.3 A/ms Table 5: Static Characteristics Symbol Test Conditions VT (2) ITM = 17 A Vt0 (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 35 mΩ IDRM IRRM VDRM = VRRM 5 µA 1 mA Value Unit Tj = 25°C Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. Table 6: Thermal resistance Symbol Rth(j-c) Parameter Junction to case (AC) Junction to ambient Rth(j-a) S = 1 cm² I2PAK / D2PAK / TO-220AB 1.4 TO-220AB Insulated 2.3 D2PAK 45 TO-220AB / I2PAK TO-220AB Insulated 60 °C/W °C/W S = Copper surface under tab. 3/10 BTA12, BTB12 and T12 Series Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) P(W) IT(RMS)(A) 16 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 14 12 10 8 6 4 2 IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) BTB / T12 BTA TC(°C) 0 25 50 75 100 125 Figure 4: Relative variation of thermal impedance versus pulse duration IT(RMS)(A) K=[Zth/Rth] 3.5 1E+0 D2PAK (S=1cm2) 3.0 Zth(j-c) 2.5 Zth(j-a) 2.0 1E-1 1.5 1.0 0.5 TC(°C) tp(s) 1E-2 0.0 0 25 50 75 100 1E-3 125 Figure 5: On-state characteristics (maximum values) Tj = Tj max. 10 Tj = 25°C. VTM(V) 1 4/10 1E+0 1E+1 1E+2 5E+2 ITSM(A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Tj max. Vto = 0.85V Rd = 35 mΩ 1.0 1E-1 Figure 6: Surge peak on-state current versus number of cycles ITM(A) 100 0.5 1E-2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t=20ms One cycle Non repetitive Tj initial=25°C Repetitive TC=90°C Number of cycles 1 10 100 1000 BTA12, BTB12 and T12 Series Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t 2 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2 ITSM(A), I t (A s) 2.5 Tj initial=25°C dI/dt limitation: 50A/µs 1000 Figure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 2.0 IGT ITSM 1.5 100 I2t IH & IL 1.0 0.5 tp(ms) Tj(°C) 10 0.0 0.01 0.10 1.00 10.00 Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235) -40 -20 0 20 40 60 80 100 120 140 Figure 10: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW/T1205) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 2.8 4.5 2.4 4.0 TW 3.5 SW 2.0 C 1.6 3.0 B 2.5 T1235/CW/BW 1.2 2.0 0.8 1.5 0.4 1.0 (dV/dt)c (V/µs) 0.5 0.0 0.1 1.0 10.0 100.0 (dV/dt)c (V/µs) 0.0 0.1 Figure 11: Relative variation of critical rate of decrease of main current versus junction temperature 1.0 10.0 100.0 Figure 12: D2PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) (dI/dt)c [Tj] / (dI/dt)c [Tj specified] Rth(j-a)(°C/W) 6 80 70 5 60 4 50 3 D2PAK 40 30 2 20 1 10 Tj(°C) 0 25 50 S(cm²) 0 0 75 100 125 0 4 8 12 16 20 24 28 32 36 40 5/10 BTA12, BTB12 and T12 Series Figure 13: Ordering Information Scheme (BTA and BTB series) BT A 12 - 600 BW RG Triac series Insulation A = insulated B = non insulated Current 12 = 12A Voltage 600 = 600V 800 = 800V Sensitivity and type B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level BW = 50mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Packing mode RG = Tube Figure 14: Ordering Information Scheme (T12 series) T 12 35 - 600 G (-TR) Triac series Current 12 = 12A Sensitivity 35 = 35mA 05 = 5mA Voltage 600 = 600V 800 = 800V Package G = D2PAK R = I2PAK Packing mode Blanck = Tube -TR = Tape & Reel Table 7: Product Selector Part Number BTA/BTB12-xxxBRG BTA/BTB12-xxxBWRG BTA/BTB12-xxxCRG BTA/BTB12-xxxCWRG BTA/BTB12-xxxSWRG BTA/BTB12-xxxTWRG T1205-xxxG T1235-xxxG T1235-xxxR BTB: non insulated TO-220AB package 6/10 Voltage (xxx) 600 V 800 V X X X X X X X X X X X X X X X X X X Sensitivity Type 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA 5 mA 35 mA 35 mA Standard Snubberless Standard Snubberless Logic Level Logic Level Snubberless Snubberless Snubberless Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB D2PAK D2PAK I2PAK BTA12, BTB12 and T12 Series Figure 15: D2PAK Package Mechanical Data DIMENSIONS REF. A E C2 L2 D L L3 A1 B2 R C Millimeters Min. B G A2 2.0 MIN. FLAT ZONE V2 Typ. Inches Max. Min. Typ. Max. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 C 0.45 0.60 0.017 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 1.40 0.048 0.055 0.024 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R V2 0.40 0° 0.016 8° 0° 8° Figure 16: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 7/10 BTA12, BTB12 and T12 Series Figure 17: TO-220AB Insulated and non insulated) Package Mechanical Data B C REF. b2 L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 Figure 18: I2PAK Package Mechanical Data REF. A A1 B B1 B2 C C2 D e E L L1 L2 V V4 8/10 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 4.30 4.60 0.169 2.49 2.69 0.098 0.70 0.93 0.028 1.20 1.38 0.047 1.25 1.40 0.049 0.055 0.45 0.60 0.018 1.21 1.36 0.048 8.95 9.35 0.352 2.44 2.64 0.096 10.00 10.28 0.394 13.10 13.60 0.516 3.75 0.147 1.27 1.40 0.050 5° 5° 45° 45° Max. 0.181 0.106 0.037 0.054 0.024 0.054 0.368 0.104 0.405 0.535 0.055 BTA12, BTB12 and T12 Series Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz TO-220AB 2.3 g 50 Tube T1205-xxxG T1205-xxxG Tube T1205-xxxG 1.5 g 50 T1205-xxxG-TR D2PAK 1000 Tape and reel T1235-xxxG T1235xxxG Tube T1235xxxG 1.5 g 50 T1235-xxxG-TR D2PAK 1000 Tape & reel T1235-xxxR T1235-xxxR I2PAK 1.5 g 50 Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History Date Revision Sep-2002 6A Description of Changes 01-Jun-2005 7 1. I2PAK package added. 2. TO-220AB delivery mode changed from bulk to tube. 28-Jul-2005 8 T1205 added Last update. 9/10 BTA12, BTB12 and T12 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10
BTA12-700BRG
物料型号:BTA12、BTB12和T12系列三端双向可控硅。

器件简介:这些三端双向可控硅可用于一般用途的交流开关,适用于静态继电器、加热调节、感应电机启动电路等的开关功能,或用于调光灯、电机速度控制器等的相位控制操作。无消振版本特别推荐用于感性负载,因为它们具有高换向性能。逻辑电平版本设计用于直接与微控制器等低功率驱动器接口。

引脚分配:文档提供了不同封装类型的引脚分配,例如TO-220AB绝缘型和非绝缘型,以及D2PAK和I2PAK封装。

参数特性:包括最大电流、电压等级、门极触发电流、保持电流、关断电流、动态电阻和热阻等。

功能详解:详细介绍了器件的电气特性,如门极触发电压、门极触发电流、通态电流上升率等。

应用信息:提供了器件在不同应用中的性能图表,例如在不同环境温度下的通态电流与功率耗散的关系。

封装信息:提供了不同封装类型的详细尺寸和机械数据,如D2PAK、TO-220AB、I2PAK封装。
BTA12-700BRG 价格&库存

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