BTA12-800BWRG

® BTA/BTB12 and T12 Series 12A TRIACS SNUBBERLESS™, LOGIC LEVEL & STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q ) 1 Value 12 600 and 800 5 to 50 Unit A V mA A1 G A2 A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) Parameter RMS on-state current (full sine wave) A2 G D2PAK (T12-G) A2 A1 A2 G A1 A2 G TO-220AB Insulated (BTA12) TO-220AB (BTB12) Value Tc = 105°C 12 Tc = 90°C t = 20 ms t = 16.7 ms 120 126 78 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 50 VDRM/VRRM + 100 Unit A A D²PAK/TO-220AB TO-220AB Ins. ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 50 Hz F = 60 Hz I ²t dI/dt tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs A² s A/µs V A W °C 1/7 VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 4 1 - 40 to + 150 - 40 to + 125 September 2002 - Ed: 6A BTA/BTB12 and T12 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol Test Conditions Quadrant T12 T1235 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (dV/dt)c = 10 V/µs Without snubber MIN. MIN. MAX. 35 50 60 500 6.5 10 10 15 20 3.5 1 35 TW 5 SW 10 1.3 0.2 15 25 30 40 6.5 2.9 35 50 60 500 6.5 50 70 80 1000 12 V/µs A/ms BTA/BTB12 CW 35 BW 50 mA V V mA mA Unit VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 100 mA IG = 1.2 IGT (dI/dt)c (2) (dV/dt)c = 0.1 V/µs s STANDARD (4 Quadrants) Symbol Test Conditions Quadrant BTA/BTB12 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 5.3 A/ms RL = 30 Ω I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/µs V/µs B 50 100 mA V V mA mA Unit STATIC CHARACTERISTICS Symbol VT (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 17 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 35 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM 2/7 BTA/BTB12 and T12 Series THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Parameter D²PAK/TO-220AB TO-220AB Insulated Junction to ambient S=1 cm² D²PAK TO-220AB TO-220AB Insulated S = Copper surface under tab Value 1.4 2.3 45 60 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 600 V BTA/BTB12-xxxB BTA/BTB12-xxxBW BTA/BTB12-xxxC BTA/BTB12-xxxCW BTA/BTB12-xxxSW BTA/BTB12-xxxTW T1235-xxxG BTB: non insulated TO-220AB package Sensitivity 800 V X X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA 35 mA X X X X X X X Type Standard Snubberless Standard Snubberless Logic level Logic Level Snubberless Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB D²PAK ORDERING INFORMATION BT A 12 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 12A 600 BW (RG) PACKING MODE Blank: Bulk RG: Tube VOLTAGE: 600: 600V 800: 800V SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL T 12 35 TRIAC SERIES CURRENT: 12A - 600 G PACKAGE: G: D2PAK (-TR) VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA PACKING MODE: Blank: Tube -TR: Tape & Reel 3/7 BTA/BTB12 and T12 Series OTHER INFORMATION Part Number BTA/BTB12-xxxyz BTA/BTB12-xxxyzRG T1235-xxxG T1235-xxxG-TR Marking BTA/BTB12-xxxyz BTA/BTB12-xxxyz T1235xxxG T1235xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel Note: x xx = voltage, yy = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P (W) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 IT(RMS)(A) Fig. 2-1: RMS on-state current versus case temperature (full cycle). IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB/T12 BTA Tc(°C) 5 6 7 8 9 10 11 12 0 25 50 75 100 125 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. IT(RMS) (A) 3.5 3.0 2.5 2.0 D2PAK (S=1cm2) Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Zth(j-c) 1E-1 Zth(j-a) 1.5 1.0 0.5 0.0 0 25 Tamb(°C) 50 75 100 125 1E-2 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 4/7 BTA/BTB12 and T12 Series Fig. 4: values). ITM (A) 100 On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITSM (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 t=20ms Tj max Non repetitive Tj initial=25°C One cycle 10 Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ Repetitive Tc=90°C VTM(V) Number of cycles 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) 1000 dI/dt limitation: 50A/µs Tj initial=25°C Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 IGT ITSM 1.5 100 I²t IH & IL 1.0 0.5 Tj(°C) tp (ms) 10 0.01 0.10 1.00 10.00 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.8 2.4 2.0 C SW Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 4.5 4.0 3.5 3.0 2.5 TW 1.6 1.2 0.8 0.4 B BW/CW/T1235 2.0 1.5 1.0 0.5 (dV/dt)c (V/µs) (dV/dt)c (V/µs) 1.0 10.0 100.0 0.0 0.1 1.0 10.0 100.0 0.0 0.1 5/7 BTA/BTB12 and T12 Series Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 0 25 50 Tj (°C) 75 100 125 Fig. 10: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (°C/W) 80 D²PAK 70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm²) 20 24 28 32 36 40 PACKAGE MECHANICAL DATA D²PAK (Plastic) DIMENSIONS A E L2 C2 REF. Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0° 1.40 0.40 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8° FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 16.90 10.30 1.30 5.08 3.70 8.90 6/7 BTA/BTB12 and T12 Series PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins. DIMENSIONS B C REF. Millimeters Min. Typ. Max. Min. Inches Typ. Max. 0.625 b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7