BTB08S

B TA08 S/A BTB08 S/A SENSITIVE GATE TRIACS . . . FEATURES VERY LOW IGT = 10mA max LOW IH = 25mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB08 S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Parameter BTA BTB A1 A2 G TO220AB (Plastic) Value Tc = 75°C Tc = 80°C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 84 80 32 10 50 - 40 to + 150 - 40 to + 110 260 8 Unit A ITSM A I2t dI/dt A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 S/A °C °C °C Symbol BTA / BTB08600 S/A 600 700 S/A 700 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 110°C 400 V March 1995 1/5 BTA08 S/A / BTB08 S/A THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.4 3.2 3.3 2.4 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix S IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL=33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * IT= 100mA gate open ITM = 11A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C Tj=110°C MAX MAX MAX MAX MIN TYP 10 5 MAX MAX MAX MIN TYP TYP 20 40 25 1.75 0.01 0.75 10 5 V/µs V/µs 10 10 1.5 0.2 2 20 40 25 mA V mA A 10 25 V V µs mA mA Unit VD=VDRM RL=3.3kΩ VD=VDRM IG = 40mA dIG/dt = 0.5A/µs IG= 1.2 IGT Linear slope up to VD=67%VDRM gate open (dI/dt)c= 3.5A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 BTA08 S/A / BTB08 S/A ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 8 VDRM / VRRM V 400 600 700 BTB (Uninsulated) 400 600 700 S X X X X X X Sensitivity Specification A X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 3/5 BTA08 S/A / BTB08 S/A Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). 4/5 BTA08 S/A / BTB08 S/A PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5