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BTB10-800BWRG

BTB10-800BWRG

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    TRIAC ALTERNISTOR 800V TO220AB

  • 数据手册
  • 价格&库存
BTB10-800BWRG 数据手册
® BTA10 and BTB10 Series 10A TRIACS A2 SNUBBERLESS™ & STANDARD Table 1: Main Features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 10 600 and 800 25 to 50 Unit A V mA G A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA10 and BTB10 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless version (W suffix) is specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) A1 A2 G A1 A2 G TO-220AB Insulated (BTA10) TO-220AB (BTB10) Table 2: Order Codes Part Number BTA10-xxxxxRG BTB10-xxxxxRG Marking See page table 8 on page 6 Value Tc = 105°C t = 20 ms t = 16.7 ms 10 100 105 55 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 50 VDSM/VRSM + 100 4 1 - 40 to + 150 - 40 to + 125 Unit A A A²s A/µs V A W °C TO-220AB TO-220AB Ins. Tc = 95°C Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25°C) F = 60 Hz tp = 10 ms I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms voltage IGM PG(AV) Tstg Tj February 2006 Peak gate current Average gate power dissipation tp = 20 µs Storage junction temperature range Operating junction temperature range REV. 6 1/7 BTA10 and BTB10 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS (3 quadrants) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) Test Conditions VD = 12 V RL = 33 Ω VD = VDRM RL = 3.3 kΩ IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III II Tj = 125°C Quadrant I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. MIN. MIN. 35 50 60 500 5.5 BTA10 / BTB10 CW 35 1.3 0.2 50 70 80 1000 9.0 BW 50 Unit mA V V mA mA V/µs A/ms (dI/dt)c (2) Without snubber ■ Standard (4 quadrants) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II Test Conditions Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. 25 40 80 200 5 BTA10 / BTB10 C 25 50 1.3 0.2 50 50 100 400 10 B 50 100 Unit mA V V mA mA V/µs V/µs VD = 12 V RL = 33 Ω (dV/dt)c (2) (dI/dt)c = 4.4 A/ms Table 5: Static Characteristics Symbol VT (2) Vt0 (2) Rd (2) IDRM IRRM ITM = 14 A Threshold voltage Dynamic resistance VDRM = VRRM Test Conditions tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 40 5 1 Unit V V mΩ µA mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. 2/7 BTA10 and BTB10 Series Table 6: Thermal resistance Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Parameter TO-220AB TO-220AB Insulated TO-220AB TO-220AB Insulated Value 1.5 2.4 60 Unit °C/W Junction to ambient °C/W Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) P(W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 Figure 2: RMS on-state current versus case temperature (full cycle) IT(RMS)(A) 12 11 10 9 8 7 6 5 4 3 2 BTA BTB IT(RMS)(A) 4 5 6 7 8 9 10 1 0 0 25 50 TC(°C) 75 100 125 Figure 3: Relative variation of thermal impedance versus pulse duration K=[Zth/Rth] 1E+0 Zth(j-c) Figure 4: On-state characteristics (maximum values) ITM(A) 100 Tj max. Vt0 = 0.85V Rd = 40 mΩ Tj = Tj max. Zth(j-a) 1E-1 10 Tj = 25°C 1E-2 1E-3 1E-2 1E-1 tp(s) 1 1E+0 1E+1 1E+2 5E+2 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/7 BTA10 and BTB10 Series Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t ITSM(A), I t (A s) 1000 Tj initial=25°C 2 2 ITSM(A) 110 100 90 80 70 60 50 40 30 20 10 0 1 Non repetitive Tj initial=25°C t=20ms One cycle dI/dt limitation: 50A/µs ITSM 100 Repetitive TC=95°C I2t Number of cycles 10 100 1000 tp(ms) 10 0.01 0.10 1.00 10.00 Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 2.0 IGT Figure 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 B C 1.5 1.0 0.5 IH & IL 1.4 1.2 1.0 0.8 BW/CW Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0.6 (dV/dt)c (V/µs) 0.4 0.1 1.0 10.0 100.0 Figure 9: Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 Tj(°C) 0 0 25 50 75 100 125 4/7 BTA10 and BTB10 Series Figure 10: Ordering Information Scheme BT A 10 - 600 BW RG Triac series Insulation A = insulated B = non insulated Current 10 = 10A Voltage 600 = 600V 800 = 800V Sensitivity and type B = 50mA Standard C = 25mA Standard Packing mode RG = Tube BW = 50mA Snubberless CW = 35mA Snubberless Table 7: Product Selector Part Number BTA/BTB10-xxxB BTA/BTB10-xxxBW BTA/BTB10-xxxC BTA/BTB10-xxxCW BTB: non insulated TO-220AB package Voltage (xxx) 600 V X X X X 800 V X X X X Sensitivity 50 mA 50 mA 25 mA 35 mA Type Standard Snubberless Standard Snubberless Package TO-220AB TO-220AB TO-220AB TO-220AB 5/7 BTA10 and BTB10 Series Figure 11: TO-220AB (insulated and non insulated) Package Mechanical Data DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 REF. A a1 a2 B b1 b2 C c1 c2 e F ØI I4 L l2 l3 M B ØI L b2 C Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 F A I4 l3 a1 l2 c2 a2 M b1 e c1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 8: Ordering Information Ordering type BTA/BTB10-xxxyzRG Marking BTA/BTB10-xxxyz Package TO-220AB Weight 2.3 g Base qty 50 Delivery mode Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History Date Apr-2002 13-Feb-2006 Revision 5A 6 Last update. TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. Description of Changes 6/7 BTA10 and BTB10 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7
BTB10-800BWRG 价格&库存

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BTB10-800BWRG
    •  国内价格 香港价格
    • 50+2.3873850+0.28934
    • 250+2.37623250+0.28799
    • 1250+2.376181250+0.28798
    • 2500+2.376122500+0.28798
    • 7500+2.376077500+0.28797

    库存:0