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BTB20CW

BTB20CW

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BTB20CW - SNUBBERLESS TRIACS - STMicroelectronics

  • 数据手册
  • 价格&库存
BTB20CW 数据手册
® BTA20 BW/CW BTB20 BW/CW SNUBBERLESS TRIACS FEATURES High commutation: (dI/dt)c > 18A/ms without snubber High surge current: ITSM = 200A VDRM up to 800V BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) s s s s A2 G A1 DESCRIPTION The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS™ concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. A1 A2 G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 500mA dIG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case BTA BTB Tc = 70°C Tc = 90°C tp = 8.3ms tp = 10ms tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl 210 200 200 20 100 -40 to +150 -40 to +125 260 °C °C A2s A/µs A Value 20 Unit A BTA/BTB20-...BW/CW Symbol VDRM VRRM Parameter 600 700 700 V Unit 600 Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A 1/6 BTA20 BW/CW BTB20 BW/CW THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Junction to ambient Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) BTA BTB BTA BTB Parameter Value 60 2.8 1.7 2.1 1.3 °C/W Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB20 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Tj = 25°C Quadrant BW I - II - III MIN. MAX. VGT VGD tgt IL VD = 12V (DC) VD = VDRM RL = 33Ω RL = 3.3kΩ Tj = 25°C Tj =125°C Tj = 25°C Tj = 25°C I - II - III I - II - III I - II - III I - III II I - II - III IH* VTM * IDRM IRRM dV/dt * IT = 500mA Gate open ITM = 28A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open Without snubber tp = 380µs Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C MAX. MAX. MAX. MAX. MAX. TYP. MIN. (dI/dt)c* Tj = 125°C TYP. MIN. 750 500 36 18 MAX. MIN. TYP. TYP. 50 90 75 1.70 0.01 3 500 250 22 11 A/ms V/µs 2 50 1.5 0.2 2 80 50 mA V mA CW 1 35 V V µs mA mA Unit VD = VDRM IG = 500mA dIG/dt = 3A/µs IG = 1.2IGT * For either polarity of electrode A2 voltage with reference to electrode A1 2/6 BTA20 BW/CW PRODUCT INFORMATION IT(RMS) Package A BTA (Insulated) BTB (Uninsulated) 20 V 600 700 600 BW X X VDRM / VRRM BTB20 BW/CW Sensitivity Specification CW X X X ORDERING INFORMATION BT Triac Series Insulation: A: insulated B: non insulated Current: 20A A 20 - 600 BW Sensitivity Voltage: 600: 600V 700: 700V 3/6 BTA20 BW/CW BTB20 BW/CW Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. Fig. 5: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 4/6 BTA20 BW/CW Fig. 7: Non repetitive surge peak on-state current versus number of cycles. BTB20 BW/CW Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: On-state characteristics (maximum values). 5/6 BTA20 BW/CW BTB20 BW/CW PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B C Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 Min. Typ. Max. Min. Typ. Max. A a1 F b2 L a2 B b1 b2 C c1 I A l4 a1 c2 c2 e F I I4 L c1 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M l2 l3 M OTHER INFORMATION Ordering type BTA/BTB20-xxxyz s s s s Marking BTA/BTB20-xxxyz Package TO-220AB Weight 2.3 g Base qty 250 Delivery mode Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6
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