BTW68-1200RG

BTW68 30 A SCRs Features ■ On-state rms current: 30 A ■ Blocking voltage: up to 1200 V ■ Gate current: 50 mA ■ UL 2500 V insulation (file ref E81734) A G K Description Available in a high power insulated package, the BTW68 series is suitable for applications where power handling and power dissipation are critical such as solid state relays, welding equipment and high power motor control. K G TOP3 ins. Based on a clip assembly technology, this device offers a superior performance in surge current handling capabilities. Thanks to the internal ceramic pad, the device provides high voltage insulation (2500 VRMS) and complies with UL standards (file ref: E81734). July 2010 A Table 1. Doc ID 17757 Rev 3 Device summary Symbol Value IT(RMS) 30 A VDRM/VRRM 600 to 1200 V IGT 50 mA 1/8 www.st.com 8 Characteristics 1 BTW68 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Unit On-state current rms (180° conduction angle) Tc = 80 °C 30 A IT(AV) Average on-state current (180° conduction angle) Tc = 80 °C 19 A ITSM Non repetitive surge peak on-state current IT(RMS) I ²t tp = 8.3 ms tp = 10 ms 420 Tj = 25 °C A 400 I²t Value for fusing Tj = 25 °C 800 A2 S dI/dt Critical rate of rise of on-state current F = 60 Hz IG = 2 x IGT , tr ≤ 100 ns Tj = 125 °C 100 A/µs IGM Peak gate current Tj = 125 °C 8 A Tj = 125 °C 1 W PG(AV) tp = 20 µs Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT VGT VGD Test conditions VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 kΩ Tj = 125 °C Value Unit MIN. 50 mA MAX. 1.5 V MIN. 0.2 V tgt VD = VDRM, IG = 200 mA, dIG/dt = 1.5 A/µs TYP. 2 µs IH IT = 500 mA, gate open MAX. 75 mA IL IG = 1.2 x IGT TYP. 40 mA dV/dt VDRM = 800 V VD = 67 % VDRM gate open VDRM = 1000 V VTM ITM = 60 A, tp = 380 µs IDRM IRRM VDRM = VRRM tq Table 4. 500 Tj = 125 °C MIN. Tj = 125 °C 2.1 V 20 µA 6 mA 100 µs Value Unit MAX. Tj = 125 °C VD = 67% VDRM, ITM = 60 A, VR = 75 V dITM/dt = 30 A/µs, dVD/dt = 20 V/µs V/µs 250 MAX. Tj = 25 °C TYP. Thermal resistance Symbol 2/8 Value Parameter Rth(j-c) Junction to case (D.C.) 1.1 °C/W Rth(j-a) Junction to ambient 50 °C/W Doc ID 17757 Rev 3 BTW68 Characteristics Figure 1. Maximum average power Figure 2. dissipation versus average on-state current P(W) Correlation between maximum average power dissipation and maximum allowable temperature P(W) 50 Tcase(°C) 50 Rth = 1°C/W α = 180° Rth = 0°C/W D.C. 40 40 α = 180° α = 120° 30 α = 60° (Tamb and Tlead) 75 α = 30° 20 20 Rth = 2°C/W 100 360° 10 10 Rth = 3°C/W α IT(RMS)(A) Tamb(°C) 125 0 0 0 50 30 α = 90° 5 10 Figure 3. 15 20 25 30 35 0 20 Average on-state current versus case Figure 4. temperature IT(AV)(A) 40 60 80 100 120 140 Relative variation of thermal impedance versus pulse duration K=[Zth(j-c)/Rth(j-c)] 50 1.00 DC Zth(j-c) 40 0.10 α = 180° 30 Zth(j-a) 20 0.01 10 Tcase(°C) tp(s) 0 0 25 Figure 5. 50 75 100 125 Relative variation of gate trigger current versus junction temperature 0.0 1E-3 Figure 6. IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Surge peak on-state current versus number of cycles ITSM(A) 2.5 350 300 2 tp=10ms 250 One cycle IGT 1.5 200 Tj initial=25°C 1 150 IH & IL 100 0.5 50 Number of cycles Tj(°C) 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 Doc ID 17757 Rev 3 10 100 1000 3/8 Characteristics Figure 7. BTW68 Non repetitive surge peak on-state Figure 8. current and corresponding value of I2t versus sinusoidal pulse width ITSM(A), I2t (A2s) On-state characteristics (maximum values) ITM(A) 2000 1000 pulse with width tp < 10 ms, and corresponding values of I²t ITSM Tj initial = 25 °C Tj=max 100 I2t 10 Tj=25°C tp(ms) 200 1 4/8 2 5 Tj max.: Vt0=1.27V Rd=12mΩ VTM(V) 1 10 1 Doc ID 17757 Rev 3 2 3 4 5 6 BTW68 2 Ordering information scheme Ordering information scheme Figure 9. Ordering information scheme BTW 68 - 600 RG Standard SCR series Type 68 = 30A Voltage 600 = 600V 800 = 800V 1000 = 100V 1200 = 1200V Packing mode RG = Tube Table 5. Product Selector Voltage (xxx) Part numbers 600 V BTW68-600RG BTW68-800RG BTW68-1000RG 800 V 1000 V Sensitivity Package 50 mA TOP3 Ins. 1200 V X X X BTW68-1200RG X Doc ID 17757 Rev 3 5/8 Package information 3 BTW68 Package information ● Epoxy meets UL94,V0 ● Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TOP3 ins. dimensions Dimensions Ref. H R B K F P Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 G C J J D E R 6/8 Inches Min. A ØL Millimeters Doc ID 17757 Rev 3 4.60 typ. 0.181 typ. BTW68 4 Ordering information Ordering information Table 7. 5 Ordering information Order code Marking BTW68-600RG BTW68-600 BTW68-800RG BTW68-800 BTW68-1000RG BTW68-1000 BTW68-1200RG BTW68-1200 Package Weight TOP3 ins. 4.5 g Base qty Delivery mode 30 Tube Revision history Table 8. Document revision history Date Revision Changes Mar-1995 1 Initial release. 13-Feb-2006 2 TOP3 Insulated delivery mode changed from bulk to tube. ECOPACK statement added. 29-Jul-2010 3 Deleted part number BTW68-200RG. Updated Table 2, Figure 7 and alpha angle in Figure 1. 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