BTW68-200RG

BTW 68 (N) SCR .. .. FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW 68 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION K The BTW 68 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. A G TOP 3 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter Value Unit RMS on-state current (180° conduction angle) BTW 68 BTW 68 N Tc=80°C Tc=85°C 30 35 A IT(AV) Average on-state current (180° conduction angle,single phase circuit) BTW 68 BTW 68 N Tc=80°C Tc=85°C 19 22 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp=8.3 ms 420 A tp=10 ms 400 tp=10 ms 800 A2s 100 A/µs - 40 to + 150 - 40 to + 125 °C °C 230 °C I2t I2 t value dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM March 1995 Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C BTW 68 BTW 68 / BTW 68 N 200 400 600 800 1000 1200 200 400 600 800 1000 1200 Unit V 1/5 BTW 68 (N) THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 50 °C/W BTW 68 1.1 °C/W BTW 68 N 0.8 Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IFGM = 8A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value BTW 68 BTW 68 N IGT VD =12V (DC) R L=33Ω Tj=25°C MAX 50 mA VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V tgt VD =VDRM IG = 200mA dIG/dt = 1.5A/µs Tj=25°C TYP 2 µs IL IG= 1.2 IGT Tj=25°C TYP 40 mA IH IT= 500mA Tj=25°C MAX 75 mA Tj=25°C MAX Tj=25°C MAX VTM gate open BTW 68 ITM= 60A BTW 68 N ITM= 70A IDRM IRRM VDRM VRRM dV/dt Linear slope up to VD =67%VDRM gate open tq 2/5 Unit 2.1 2.2 V tp= 380µs Rated Rated Tj= 125°C VDRM≤ 800V VDRM ≥ 1000V VD =67%VDRM ITM= 60A VR= 75V dITM/dt=30 A/µs dVD /dt= 20V/µs 0.02 mA 6 Tj= 125°C MIN 500 250 V/µs Tj= 125°C TYP 100 µs BTW 68 (N) Package BTW 68 (Insulated) BTW 68 N (Uninsulated) IT(RMS) Sensitivity Specification A VDRM / VRRM V 30 200 X 400 X 600 X 35 BTW 800 X 1000 X 1200 X 600 X 800 X 1000 X 1200 X Fig.1 : Maximum average power dissipation versus average on-state current (BTW 68). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68). Fig.3 : Maximum average power dissipation versus average on-state current (BTW 68 N). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (BTW 68 N). 3/5 BTW 68 (N) Fig.5 : Average on-state temperature (BTW 68). current versus case Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Average on-state temperature (BTW 68 N). current versus case Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp( s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E +3 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. 4/5 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. BTW 68 (N) Fig11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A H I R 4.6 J G B D P L N Cooling method : C Marking : type number Weight : 4.7 g DIMENSIONS Millimeters N M C Inches Min. Max. Min. Max. A 15.10 15.50 0.594 0.611 B 20.70 21.10 0.814 0.831 C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40 - 0.133 - H 4.40 4.60 0.173 0.182 I 4.08 4.17 0.161 0.164 J 1.45 1.55 0.057 0.062 L 0.50 0.70 0.019 0.028 M 2.70 2.90 0.106 0.115 N 5.40 5.65 0.212 0.223 P 1.20 1.40 0.047 0.056 Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5