BTW68
30 A SCRs
Features
■
On-state rms current: 30 A
■
Blocking voltage: up to 1200 V
■
Gate current: 50 mA
■
UL 2500 V insulation (file ref E81734)
A
G
K
Description
Available in a high power insulated package, the
BTW68 series is suitable for applications where
power handling and power dissipation are critical
such as solid state relays, welding equipment and
high power motor control.
K
G
TOP3 ins.
Based on a clip assembly technology, this device
offers a superior performance in surge current
handling capabilities.
Thanks to the internal ceramic pad, the device
provides high voltage insulation (2500 VRMS) and
complies with UL standards (file ref: E81734).
July 2010
A
Table 1.
Doc ID 17757 Rev 3
Device summary
Symbol
Value
IT(RMS)
30 A
VDRM/VRRM
600 to 1200 V
IGT
50 mA
1/8
www.st.com
8
Characteristics
1
BTW68
Characteristics
Table 2.
Absolute maximum ratings (limiting values)
Symbol
Parameter
Unit
On-state current rms (180° conduction angle)
Tc = 80 °C
30
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 80 °C
19
A
ITSM
Non repetitive surge peak on-state
current
IT(RMS)
I ²t
tp = 8.3 ms
tp = 10 ms
420
Tj = 25 °C
A
400
I²t Value for fusing
Tj = 25 °C
800
A2 S
dI/dt
Critical rate of rise of on-state current
F = 60 Hz
IG = 2 x IGT , tr ≤ 100 ns
Tj = 125 °C
100
A/µs
IGM
Peak gate current
Tj = 125 °C
8
A
Tj = 125 °C
1
W
PG(AV)
tp = 20 µs
Average gate power dissipation
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
5
V
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
IGT
VGT
VGD
Test conditions
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
Tj = 125 °C
Value
Unit
MIN.
50
mA
MAX.
1.5
V
MIN.
0.2
V
tgt
VD = VDRM, IG = 200 mA, dIG/dt = 1.5 A/µs
TYP.
2
µs
IH
IT = 500 mA, gate open
MAX.
75
mA
IL
IG = 1.2 x IGT
TYP.
40
mA
dV/dt
VDRM = 800 V
VD = 67 % VDRM
gate open
VDRM = 1000 V
VTM
ITM = 60 A, tp = 380 µs
IDRM
IRRM
VDRM = VRRM
tq
Table 4.
500
Tj = 125 °C
MIN.
Tj = 125 °C
2.1
V
20
µA
6
mA
100
µs
Value
Unit
MAX.
Tj = 125 °C
VD = 67% VDRM, ITM = 60 A, VR = 75 V
dITM/dt = 30 A/µs, dVD/dt = 20 V/µs
V/µs
250
MAX.
Tj = 25 °C
TYP.
Thermal resistance
Symbol
2/8
Value
Parameter
Rth(j-c)
Junction to case (D.C.)
1.1
°C/W
Rth(j-a)
Junction to ambient
50
°C/W
Doc ID 17757 Rev 3
BTW68
Characteristics
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
P(W)
Correlation between maximum
average power dissipation and
maximum allowable temperature
P(W)
50
Tcase(°C)
50
Rth = 1°C/W
α = 180°
Rth = 0°C/W
D.C.
40
40
α = 180°
α = 120°
30
α = 60°
(Tamb and Tlead)
75
α = 30°
20
20
Rth = 2°C/W
100
360°
10
10
Rth = 3°C/W
α
IT(RMS)(A)
Tamb(°C)
125
0
0
0
50
30
α = 90°
5
10
Figure 3.
15
20
25
30
35
0
20
Average on-state current versus case Figure 4.
temperature
IT(AV)(A)
40
60
80
100
120
140
Relative variation of thermal
impedance versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
50
1.00
DC
Zth(j-c)
40
0.10
α = 180°
30
Zth(j-a)
20
0.01
10
Tcase(°C)
tp(s)
0
0
25
Figure 5.
50
75
100
125
Relative variation of gate trigger
current versus junction
temperature
0.0
1E-3
Figure 6.
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Surge peak on-state current versus
number of cycles
ITSM(A)
2.5
350
300
2
tp=10ms
250
One cycle
IGT
1.5
200
Tj initial=25°C
1
150
IH & IL
100
0.5
50
Number of cycles
Tj(°C)
0
0
-40 -30 -20 -10
0
10 20
30
40 50
60 70 80
90 100 110 120 130
1
Doc ID 17757 Rev 3
10
100
1000
3/8
Characteristics
Figure 7.
BTW68
Non repetitive surge peak on-state Figure 8.
current and corresponding value of
I2t versus sinusoidal pulse width
ITSM(A), I2t (A2s)
On-state characteristics
(maximum values)
ITM(A)
2000
1000
pulse with width tp < 10 ms, and corresponding values of I²t
ITSM
Tj initial = 25 °C
Tj=max
100
I2t
10
Tj=25°C
tp(ms)
200
1
4/8
2
5
Tj max.:
Vt0=1.27V
Rd=12mΩ
VTM(V)
1
10
1
Doc ID 17757 Rev 3
2
3
4
5
6
BTW68
2
Ordering information scheme
Ordering information scheme
Figure 9.
Ordering information scheme
BTW
68
-
600
RG
Standard SCR series
Type
68 = 30A
Voltage
600 = 600V
800 = 800V
1000 = 100V
1200 = 1200V
Packing mode
RG = Tube
Table 5.
Product Selector
Voltage (xxx)
Part numbers
600 V
BTW68-600RG
BTW68-800RG
BTW68-1000RG
800 V
1000 V
Sensitivity
Package
50 mA
TOP3 Ins.
1200 V
X
X
X
BTW68-1200RG
X
Doc ID 17757 Rev 3
5/8
Package information
3
BTW68
Package information
●
Epoxy meets UL94,V0
●
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TOP3 ins. dimensions
Dimensions
Ref.
H
R
B
K
F
P
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5
0.622
0.650
G
20.4
21.1
0.815
0.831
H
15.1
15.5
0.594
0.610
J
5.4
5.65
0.213
0.222
K
3.4
3.65
0.134
0.144
ØL
4.08
4.17
0.161
0.164
P
1.20
1.40
0.047
0.055
G
C
J
J
D
E
R
6/8
Inches
Min.
A
ØL
Millimeters
Doc ID 17757 Rev 3
4.60 typ.
0.181 typ.
BTW68
4
Ordering information
Ordering information
Table 7.
5
Ordering information
Order code
Marking
BTW68-600RG
BTW68-600
BTW68-800RG
BTW68-800
BTW68-1000RG
BTW68-1000
BTW68-1200RG
BTW68-1200
Package
Weight
TOP3 ins.
4.5 g
Base qty Delivery mode
30
Tube
Revision history
Table 8.
Document revision history
Date
Revision
Changes
Mar-1995
1
Initial release.
13-Feb-2006
2
TOP3 Insulated delivery mode changed from bulk to tube.
ECOPACK statement added.
29-Jul-2010
3
Deleted part number BTW68-200RG. Updated Table 2, Figure 7 and
alpha angle in Figure 1.
Doc ID 17757 Rev 3
7/8
BTW68
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
8/8
Doc ID 17757 Rev 3