BTW69-1200N

BTW69-1200N 50 A – 1200 V non insulated SCR thyristor Datasheet - production data Description A G K A K Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch, controlled AC rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications. Based on a clip assembly technology, the BTW69-1200N offers a superior performance in surge current handling and thermal cooling capabilities. A G Table 1. Device summary TOP3 non insulated Features Symbol Value IT(RMS) 50 A VDRM/VRRM 1200 V IGT 50 mA  On-state rms current: 50 A  Blocking voltage: 1200 V  Gate current: 50 mA Applications  Solid state relay  Battery charging system  Uninterruptible power supply  Variable speed motor drive  Industrial welding systems  By pass AC switch June 2013 This is information on a product in full production. DocID024685 Rev 1 1/9 www.st.com Characteristics 1 BTW69-1200N Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit On-state current rms (180° conduction angle) Tc = 102 °C 50 A IT(AV) Average on-state current (180° conduction angle) Tc = 102 °C 31 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms I²t Value tp = 10 ms IT(RMS) I²t dI/dt Critical rate of rise of on-state current Gate supply: IG = 100 mA, dIG/dt = 1 A/µs IGM Peak gate current PG(AV) tp = 10 ms tp = 20 µs Average gate power dissipation 763 Tj = 25 °C A 700 2450 A2S 100 A/µs Tj = 125 °C 8 A Tj = 125 °C 1 W Tj = 25 °C Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VGM Maximum peak reverse gate voltage 5 V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT Test conditions Value MIN. 8 MAX. 50 MAX. 1.3 V MIN. 0.2 V mA VD = 12 V, RL = 33  VGT VGD VD = VDRM, RL = 3.3 k IH IT = 500 mA, gate open MAX. 100 mA IL IG = 1.2 x IGT TYP. 125 mA tgt IT = 50 A, VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs TYP. 2 µs VD = 67% VDRM, gate open Tj = 125 °C MIN. 1000 V/µs VD = 800 V, ITM = 50 A, VR = 75 V, tp = 100 µs, dITM/dt = 30 A/µs, dVD/dt = 20 V/µs Tj = 125 °C TYP. 100 µs VTM ITM = 100 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V Vt0 Threshold voltage Tj = 125 °C MAX. 0.9 V RD Dynamic resistance Tj = 125 °C MAX. 8.5 m VD = VDRM VR = VRRM Tj = 25 °C 10 µA 5 mA dV/dt tq IDRM IRRM 2/9 Unit Tj = 125 °C Tj = 125 °C DocID024685 Rev 1 MAX. BTW69-1200N Characteristics Table 4. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (DC, typ.) Rth(j-a) Junction to ambient (DC) Figure 1. Maximum average power dissipation versus average on-state current Unit 0.45 °C/W 50 °C/W Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures P(AV) (W) P(W) 55 Value 50 a = 120° 45 DC a = 180° Tc(°C) 50 102.7 a = 90° 40 105.2 40 a = 60° 35 100.2 a = 180° 107.7 a = 30° 110.2 30 30 25 20 20 15 360° 10 IT(AV)(A) 112.7 0 °C/W 115.2 1 °C/W 117.7 2 °C/W 10 5 RTH (assembly) 120.2 3 °C/W a 122.7 T a(°C) 0 0 0 5 10 15 20 25 30 35 40 Figure 3. Average and DC on-state current versus case temperature 55 IT(AV)(A) 0 25 50 75 100 125 Figure 4. Average and DC on-state current versus ambient temperature 3.0 IT(AV)(A) DC 50 DC a = 120° 45 a = 60° 40 2.5 a = 90° a = 180° 2.0 a = 180° 35 30 1.5 25 20 1.0 15 10 0.5 a = 30° Tcase(°C) 5 Ta(°C) 0 0.0 0 25 50 75 100 125 0 DocID024685 Rev 1 25 50 75 100 125 3/9 9 Characteristics BTW69-1200N Figure 5. Relative variation of thermal impedance versus pulse duration 1.0E+00 Figure 6. Relative variation of gate trigger current and gate trigger voltage versus junction temperature (typical value) K=[Zth/Rth] IGT,VGT [Tj] / IGT,VGT [Tj=25°C] 1.8 Zth(j-c) 1.5 Zth(j-a) IGT 1.3 VGT 1.0 1.0E-01 0.8 0.5 0.3 tp(s) Tj(°C) 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.0 -40 Figure 7. Relative variation of holding, and latching currents versus junction temperature (typical values) 1.8 -20 0 20 40 60 80 100 125 Figure 8. Surge peak on-state current versus number of cycles IH,IL [Tj] / IH,IL [Tj=25°C] ITSM(A) 600 550 1.5 IL 500 tp=10ms 450 1.3 IH One cycle Non repetitive Tj initial=25 °C 400 1.0 350 300 0.8 250 200 0.5 150 100 0.3 Repetitive TC=102°C 50 Tj(°C) Number of cycles 0 0.0 1 -40 -20 0 20 40 60 80 100 100 1000 125 Figure 9. Non repetitive surge peak on-state current and corresponding value of I2t versus sinusoidal pulse 2 10000 10 ITSM(A), I2t (A s) Figure 10. On-state characteristics (maximum values) 1000 ITM (A) Tj initial=25 °C dI/dt limitation: 100 A/µs I²t ITSM 1000 100 100 10 tp(ms) pulse with width tp < 10 ms 10 0.01 4/9 Tj =125 °C Tj max : Vto = 0.9 V Rd = 8.5 mW VTM (V) Tj =25 °C 1 0.10 1.00 10.00 0.0 DocID024685 Rev 1 1.0 2.0 3.0 4.0 BTW69-1200N Characteristics Figure 11. Relative variation of leakage current Figure 12. Relative variation of leakage current versus junction temperature for different values versus junction temperature for different values of blocking voltage (600 and 800 V) of blocking voltage (1000 and 1200 V) 1.0E+00 IDRM, IRRM [Tj;V DRM, V RRM ] / I DRM, IRRM IDRM, IRRM [Tj;V DRM, V RRM ] / I DRM, IRRM 1.0E+00 VDRM=VRRM=800 V 1.0E-01 VDRM=VRRM=1200 V 1.0E-01 1.0E-02 1.0E-02 VDRM=VRRM=600 V VDRM=VRRM=1000 V 1.0E-03 1.0E-03 T j (°C) T j (°C) 1.0E-04 1.0E-04 25 50 75 100 125 25 DocID024685 Rev 1 50 75 100 125 5/9 9 Package information 2 BTW69-1200N Package information  Epoxy meets UL94,V0  Lead-free packages  Cooling method: by conduction (C)  Recommended torque value: 0.9 to 1.2 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. TOP3 dimension definitions H R A B ØL K F P C J 6/9 G J DocID024685 Rev 1 D E BTW69-1200N Package information Table 5. TOP3 dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 typ. DocID024685 Rev 1 0.181 typ. 7/9 9 Ordering information 3 BTW69-1200N Ordering information Figure 14. Ordering information scheme BTW 69 - 1200 N Standard SCR series Type 69 = 50 A Voltage 1200 = 1200 V Package N = TOP3 non insulated Table 6. Ordering information 4 Order code Marking Package Weight BTW69-1200N BTW691200N TOP3 4.55 g Revision history Table 7. Document revision history 8/9 Date Revision 14-Jun-2013 1 Changes Initial release. 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