BTW69-200RG

BTW67 Datasheet 50 A,1000 V SCR thyristor in RD91 Features A • • • • G K • High current SCR High commutation capability Low thermal resistance with clip bonding Insulated package RD91 high power: – Low thermal resistance with clip bonding – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref : E81734) RoHS (2002/95/EC) compliant Applications RD91 • • • Solid state relays Welding equipment High power motor control Description Available in 2500 V insulated high power package, the 50 A and 1000 V SCR BTW67 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment and high power motor control. Product status link Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. BTW67 Product summary IT(RMS) 50 A VDRM/VRRM 1000 V IGT 80 mA DS0642 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com BTW67 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters IT(RMS) RMS on-state current (full sine wave) Average on-state current IT(AV) (180° conduction angle) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t Value Unit Tc = 70 °C 50 A Tc = 70 °C 32 A tp =8.3 ms 610 A 1680 A2s tp = 10 ms I2t value for fusing Critical rate of rise of on-state current F = 60 Hz Tj = 125 °C 50 A/µs tp = 20 µs Tj = 125 °C 8 A Tj = 125 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C VGRM Maximum peak reverse gate voltage 5 V 2500 V dl/dt IG = 2 x IGT , tr ≤ 100 ns IGM Peak gate current PG(AV) Average gate power dissipation Tstg Vins Insulation RMS voltage, 1 minute Table 2. Electrical characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT Tj Test conditions VD = 12 V, RL = 33 Ω 25 °C VGT Value Unit Min. 8 Max 80 Max 1.3 V Min. 0.2 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 150 mA IL IG = 1.2 x IGT Max. 200 mA 125 °C dV/dt VD = 67 %, VDRM gate open 125 °C Min. 1000 V/µs VTM ITM = 100 A, tp = 380 μs 25 °C Max. 1.9 V VTO threshold on-state voltage 125 °C Max. 1.0 V RD Dynamic resistance 125 °C Max. 8.5 mΩ 10 µA 5 mA IDRM/IRRM 25 °C VD = VDRM, VR = VRRM 125 °C Max. Table 3. Thermal resistance Symbol Rth(j-c) DS0642 - Rev 6 Parameters Junction to case (D.C) Value Unit 1.0 °C/W page 2/10 BTW67 Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average on-state current versus case temperature IT(AV) (A) P(W) 55 60 α = 180° 50 DC 50 45 40 40 35 α = 180° 30 30 25 20 20 15 360° 360° 10 10 IT(AV) (A) 5 0 0 20 10 40 30 Figure 3. Relative variation of thermal impedance versus pulse duration 1.E-00 Tc(°C) 0 0 25 50 75 100 125 Figure 4. Relative variation of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C] K = [Zth/ Rth] 2.5 2.0 IGT 1.E-01 1.5 Zth(j-c) 1.0 IH and IL 0.5 Tj (°C) tP(s) 1.E-02 1.E-03 1.E-01 1.E+01 1.E+03 Figure 5. Surge peak on-state current versus number of cycles 0.0 -40 110 Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp