BTW69-600RG

BTW67 Datasheet 50 A,1000 V SCR thyristor in RD91 A Features K • • • • G A G K • High current SCR High commutation capability Low thermal resistance with clip bonding Insulated package RD91 high power: – Low thermal resistance with clip bonding – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref : E81734) RoHS (2002/95/EC) compliant Applications RD91 • • • Product status link BTW67 Product summary IT(RMS) 50 A VDRM/VRRM 1000 V IGT 80 mA Solid state relays Welding equipment High power motor control Description Available in 2500 V insulated high power package, the 50 A and 1000 V SCR BTW67 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment and high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. DS0642 - Rev 7 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com BTW67 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters IT(RMS) RMS on-state current (full sine wave) Average on-state current IT(AV) (180° conduction angle) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t Value Unit Tc = 70 °C 50 A Tc = 70 °C 32 A tp =8.3 ms 610 A 1680 A2s tp = 10 ms I2t value for fusing Critical rate of rise of on-state current F = 60 Hz Tj = 125 °C 50 A/µs tp = 20 µs Tj = 125 °C 8 A Tj = 125 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C VGRM Maximum peak reverse gate voltage 5 V 2500 V dl/dt IG = 2 x IGT , tr ≤ 100 ns IGM Peak gate current PG(AV) Average gate power dissipation Tstg Vins Insulation RMS voltage, 1 minute Table 2. Electrical characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT Tj Test conditions VD = 12 V, RL = 33 Ω 25 °C VGT Value Unit Min. 8 Max 80 Max 1.3 V Min. 0.2 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 150 mA IL IG = 1.2 x IGT Max. 200 mA 125 °C dV/dt VD = 67 %, VDRM gate open 125 °C Min. 1000 V/µs VTM ITM = 100 A, tp = 380 μs 25 °C Max. 1.9 V VTO threshold on-state voltage 125 °C Max. 1.0 V RD Dynamic resistance 125 °C Max. 8.5 mΩ 10 µA 5 mA IDRM/IRRM 25 °C VD = VDRM, VR = VRRM 125 °C Max. Table 3. Thermal resistance Symbol Rth(j-c) DS0642 - Rev 7 Parameters Junction to case (D.C) Value Unit 1.0 °C/W page 2/9 BTW67 Characteristics curves 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average on-state current versus case temperature IT(AV) (A) P(W) 55 60 α = 180° 50 DC 50 45 40 40 35 α = 180° 30 30 25 20 20 15 360° 360° 10 10 IT(AV) (A) 5 0 0 20 10 40 30 Figure 3. Relative variation of thermal impedance versus pulse duration 1.E-00 Tc(°C) 0 0 25 50 75 100 125 Figure 4. Relative variation of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C] K = [Zth/ Rth] 2.5 2.0 IGT 1.E-01 1.5 Zth(j-c) 1.0 IH and IL 0.5 Tj (°C) tP(s) 1.E-02 1.E-03 1.E-01 1.E+01 1.E+03 Figure 5. Surge peak on-state current versus number of cycles 0.0 -40 110 Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp