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BU505_05

BU505_05

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BU505_05 - High Voltage NPN Multiepitaxial Fast-Switching Transistor - STMicroelectronics

  • 数据手册
  • 价格&库存
BU505_05 数据手册
BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features ■ ■ ■ HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS Applications ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 1 3 2 ■ Description The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. It’s characteristics make also ideal for power supplies. Internal Schematic Diagram Order Codes Part Number BU505 Marking BU505 Package TO-220 Packing TUBE August 2005 rev.4 1/10 www.st.com 10 1 Absolute Maximum Ratings BU505 1 Table 1. Symbol VCES VCEO IC ICM IB IBM PTOT TSTG TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value 1500 700 2.5 4 1 2 75 -65 to 150 150 Unit V V A A A A W °C °C Table 2. Symbol RthJ-case Thermal Data Parameter Thermal Resistance Junction-Case____________________Max Value 1.67 Unit °C/W 2/10 BU505 2 Electrical Characteristics 2 Table 3. Symbol ICES IEBO Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCE = 1500V VCE = 1500V____TC = 125°C VEB = 5V IC = 10mA L = 25mH IC = 2A _____ IB = 0.9A 1 1.3 2 V V A 700 Min. Typ. Max. 0.15 1 1 Unit mA mA mA V VCEO(SUS) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 VBE(sat) Note: 1 Is/b ts tf Second Breakdown Current INDUCTIVE LOAD Storage Time Fall Time Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 2A _____ IB = 0.9A VCE = 120V t = 220μs IC = 2A ____ _ Vclamp = 250V IB1 = 0.7A ___ Vbe(off) = -5A L = 200 μH Rbb = 0 2 350 μs ns Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/10 2 Electrical Characteristics BU505 2.1 Typical Characteristics Safe Operating Area Figure 2. Derating Curve Figure 1. Figure 3. DC Current Gain Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Storage Time Figure 6. Inductive Fall Time 4/10 BU505 Figure 7. Inductive Storage Time Figure 8. 2 Electrical Characteristics Reverse Biased SOA 5/10 3 Test Circuits BU505 3 Figure 9. Test Circuits Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier 6/10 BU505 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 4 Package Mechanical Data BU505 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 8/10 BU505 5 Revision History 5 Revision History Date 05-Sep-2001 06-Jul-2005 25-Jul-2005 19-Aug-2005 Revision 1 2 3 4 Initial release. Some value change in Table 3. New Template New ECOPACK® label Changes 9/10 5 Revision History BU505 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10
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