BU810_00

® BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 1 2 APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs s GENERAL PURPOSE SWITCHING s TO-220 DESCRIPTION The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM R = 200 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 2 5 o C Storage Temperature Junction Temperature Value 600 400 5 7 10 2 75 -65 to 150 150 Unit V V V A A A W o o C C 1/4 December 2000 BU810 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.66 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO ∗ Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 6 00 V V CE = 4 00 V V EB = 5 V I C = 0 .1 A IC = 2 A IC = 4 A IC = 7 A IC = 2 A IC = 4 A I B = 2 0 mA I B = 2 00 mA I B = 0 .7 A I B = 2 0 mA I B = 2 00 mA 400 2 2.5 3 2.2 3 3 Min. Typ. Max. 200 1 150 Unit µA mA mA V V V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V BE(sat) ∗ VF Diode Forward Voltage I F = 7 A RESISTIVE SWITCHING TIMES Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V Clamp = 2 50V V BE(off) = -5 V IC = 2A I B1 = 2 0mA Min. Typ. Max. 0.6 1.5 0.5 Unit µs µs µs INDUCTIVE SWITCHING TIMES Symbol ts tf ts tf Parameter Storage Time Fall Time Storage Time Fall Time Test Conditions V Clamp = 2 50V V BE(off) = -5 V V Clamp = 2 50V V BE(off) = -5 V I C = 2 A I B1 = 2 0mA L = 500 µ H I C = 7 A I B1 = 0 .7A L = 500 µ H Min. Typ. Max. 1.5 0.4 1.5 0.4 Unit µs µs µs µs * Pulsed : Pulse duration = 300 µs, duty cycle = 2% 2/4 BU810 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BU810 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4