BU900TP

BU900TP NPN power TRILINTON™ Features ■ Integrated high voltage active clamping zener ■ Clamping energy capability 100% tested ■ Very high current gain ) s ( t Applications c u d o ) r s ( P t c e t u e d l o o Description r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 1 ■ Engine ignition control ■ Switching regulators ■ Motor control ■ Light ballast 2 3 SOT-82 Figure 1. Internal schematic diagram The BU900TP is a planar, monolithic, high voltage power TRILINTON™ with a built-in active Zener clamping circuit. This device has been specifically designed for unclamped, inductive applications such as ignition systems, switching regulators, and wherever high voltage and high robustness is required. Table 1. Device summary Part number Marking Package Packaging BU900TP BU900TP SOT-82 Tube November 2008 Rev 2 1/8 www.st.com 8 Electrical ratings 1 BU900TP Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 370 V VEBO Emitter-base voltage (IC = 0) 13 V Collector current 5 A Collector peak current (tP < 5ms) 8 A Base current 1 A Ptot Total dissipation at Tc = 25°C 55 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 2.27 °C/W IC ICM ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction-case 2/8 BU900TP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit IEBO Emitter cut-off current (IC = 0) VEB = 13 V 100 µA ICES Collector cut-off current (VBE = 0) VCE = 370 V 100 µA Collector-emitter breakdown voltage (VBE = 0) IC = 50 mA 660 V V V V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O V(BR)CES _ IB = 1 mA IC = 3 A _ _ IB = 3 mA Base-emitter saturation voltage IC = 3 A _ IB = 3 mA 3.5 DC current gain IC = 1 A _ VCE = 5 V 7000 Collector-emitter saturation voltage VBE(sat) (1) Es/b (1) IC = 2.5 A 4 4 VCE(sat) (1) hFE 370 Secondary breakdown energy IC = 4 A L = 10 mH 80 mJ 1. Pulsed duration = 300 µs, duty cycle ≤1.5% 3/8 Electrical characteristics 2.1 BU900TP Electrical characteristics (curves) Figure 2. DC current gain Figure 3. Collector-emitter saturation voltage ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 4. 4/8 Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage BU900TP 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 5/8 Package mechanical data BU900TP SOT-82 mechanical data mm Dim. Min. A Typ. 2.40 Max. 2.70 B 0.70 0.90 B1 0.49 0.75 D 10.50 10.80 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O E 7.40 7.80 e 2.04 2.54 e1 4.07 5.08 L 15.40 16 Q Q1 3.80 1 1.30 H2 2.07 I 1.27 0016115_F 6/8 BU900TP 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 02-Aug-2007 1 First release. 19-Nov-2008 2 Document status changed from preliminary to datasheet. ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 7/8 BU900TP ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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