BU931T_03

® BU931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE s APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Emitter-Base Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 500 400 5 10 15 1 5 125 -65 to 175 175 Unit V V V A A A A W o o C C October 2003 1/6 BU931T THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 5 00 V V CE = 5 00 V V CE = 4 50 V V CE = 4 50 V V EB = 5 V I C = 1 00 mA L = 10 mH I B = 0 V CLAMP = 4 00 V (see fig.4) IC = 7 A IC = 8 A IC = 7 A IC = 8 A IC = 5 A I B = 7 0 mA I B = 1 00 mA I B = 7 0 mA I B = 1 00 mA V CE = 1 0 V 300 2.5 8 V A 400 T C = 1 25 o C T C = 1 25 o C Min. Typ. Max. 100 0.5 100 0.5 20 Unit µA mA µA mA mA V V CEO(SUS) ∗ Collector-Emitter Saturation Voltage (I B = 0 ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ VF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 1.6 1.8 2.2 2.4 V V V V Diode Forward Voltage I F = 1 0 A Functional Test INDUCTIVE LOAD Storage Time Fall Time V CC = 2 4 V V clamp = 4 00 V L= 7 mH (see fig. 1) V CC = 1 2 V V clamp = 3 00 V L= 7 mH I C = 7 A I B = 7 0 mA R BE = 4 7 Ω V BE = 0 (see fig. 3) ts tf 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/6 BU931T Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load 3/6 BU931T FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit 4/6 BU931T TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 5/6 BU931T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6