BUF405A

® BUF405A BUF405AFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s HIGH SWITCHING SPEED NPN POWER TRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINE APPLICATIONS 100 KHz SWITCHING SPEED LOW COST DRIVE CIRCUITS LOW DYNAMIC SATURATION 3 3 1 2 APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR DRIVERS DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability. The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature. 1 2 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter BUF405A Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at T c = 25 C Storage Temperature Max O peration Junction T emperature 1000 450 7 7.5 15 3 4.5 80 -65 to 150 150 39 Valu e BUF405AF P V V V A A A A W o C o C Un it January 1999 1/6 BUF405A / BUF405AFP THERMAL DATA T O-220 R t hj-ca se Thermal Resistance Junction-Case Max 1.56 TO-220F P 3.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min. Typ . Max. 0.1 0.5 0.1 0.5 1 Un it mA mA mA mA mA V V V CE = V CEV V BE = -1.5 V V CE = V CEV V BE = -1.5 V T c =100 o C V BE = 5 V I C = 200 mA I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 2.5 A 2.5 A 5A 5A 2.5 A 2.5 A 5A 5A IB = 0.25 A IB = 0.25 A IB = 1 A IB = 1 A IB IB IB IB = = = = 0.25 A 0.25 A 1A 1A L = 25 mH 450 7 0.8 V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Tc =100 C T c =100 C 0.9 T c =100 C Tc =100 C 40 30 60 2.1 o o o o 2.8 0.5 2 1.5 1.1 1.5 V V V V V V V V A /µ s A /µ s A /µ s V V V V µs µs µs V BE(s at)∗ Base-Emitt er Saturation Voltage di c /dt Rate of rise on-state Collector Current V CC = 300 V R C = 0 t p= 3 µ s o I B1 = 0.375 A Tj =25 C I B1 = 0.375 A Tj =100 oC o Tj =100 C I B1 = 1.5 A V CC = 300 V I B1 = 0.375 A V CC = 300 V I B1 = 0.375 A I C = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH I C = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH IC = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH I C = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH R C = 120 Ω o T j =25 C o T j =100 C R C = 120 Ω Tj =25 oC o T j =100 C V CC = 50 V R BB = 2.4 Ω I B1 = 0.25 A V CC = 50 V R BB = 2.4 Ω I B1 = 0.25 A o Tj =100 C VCC = 50 V R BB = 2.4 Ω I B1 = 0.25 A Tj =125 oC V CC = 50 V R BB = 0.6 Ω I B1 = 0.25 A V CE (3 µ s) Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime Maximum Collector Emitter Voltage without Snubber INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime 8 1.1 4 0.8 0.05 0.08 1.8 0.1 0.18 500 V CE (5 µ s) ts tf tc ts tf tc V CEW µs µs µs V ts tf tc 1.5 0.04 0.07 µs µs µs 2/6 BUF405A / BUF405AFP ELECTRICAL CHARACTERISTICS (continued) Symb ol ts tf tc V CEW Parameter INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime Maximum Collector Emitter Voltage without Snubber INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime Maximum Collector Emitter Voltage without Snubber Test Cond ition s I C = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH IC = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH IC = 5 A V BB = -5 V V c la mp = 400 V L = 0.5 mH IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH ICWoff = 7.5 A V BB = - 5 V L = 0.33 mH o T j =125 C VCC = 50 V R BB = 0.6 Ω IB1 = 0.25 A o T j =100 C V CC = 50 V R BB = 0.6 Ω I B1 = 0.25 A o T j =125 C VCC = 50 V R BB = 2.4 Ω IB1 = 1 A VCC = 50 V R BB =2.4 Ω IB1 = 1 A o Tj =100 C V CC = 50 V R BB = 2.4 Ω I B1 = 1.5 A 400 500 Min. Typ . Max. 3 0.15 0.25 Un it µs µs µs V ts tf tc ts tf tc V CEW 1.9 0.06 0.12 3.2 0.12 0.3 µs µs µs µs µs µs V ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % Turn-on Switching Test Circuit Turn-off Switching Test Circuit 1 Fast electronic switch 2 Non-inductive Resistor 1 F ast electronic switc h 2 Non-inductive Resistor 3 F ast recovery rectifier 3/6 BUF405A / BUF405AFP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 4/6 BUF405A / BUF405AFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 G 5/6 BUF405A / BUF405AFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6