BUF410A_08

BUF410A High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements 3 2 1 Applications ■ ■ Switch mode power supplies Motor control TO-247 Description The BUF410A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BUF410A Package TO-247 Packaging Tube Order code BUF410A March 2008 Rev 3 1/9 www.st.com 9 Electrical ratings BUF410A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage (V BE = -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 1000 450 7 15 30 3 4.5 125 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 1 Unit °C/W 2/9 BUF410A Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Collector cut-off current (RBE = 10 Ω) Collector cut-off current (VBE = -1.5 V) Test conditions VCE = 1000 V VCE = 1000 V VCE = 1000 V VCE = 1000 V TC = 100 °C TC = 100 °C Min. Typ. Max. 0.2 1 0.2 1 Unit mA mA mA mA ICER ICEV IEBO Emitter cut-off current VEB = 5 V (IC = 0) IC = 200 mA 450 1 mA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) V IE = 50 mA IC = 5 A IB = 0.5 A IB = 0.5 A TC = 100 °C 7 0.8 2.8 0.5 TC = 100 °C 0.9 1.5 1.1 1.5 2 V V V V V V V V V VCE(sat) (1) Collector-emitter saturation voltage IC = 5 A IC = 10 A IB = 2 A IC = 10 A IB = 2 A IC = 5 A IB = 0.5 A VBE(sat) (1) Base-emitter saturation voltage IC = 5 A IB = 0.5 A TC = 100 °C IC = 10 A IB = 2 A TC = 100 °C IC = 10 A IB = 2 A dic / dt Rate of rise on-state collector current VCC = 300 V R C = 0 t p = 3 µs IB1 = 0.75 A TC = 25 °C IB1 = 0.75 A IB1 = 3 A TC = 100 °C TC = 100 °C R C = 60 Ω TC = 25 °C TC = 100 °C R C = 60 Ω TC = 25 °C TC = 100 °C VCC = 50 V RBB = 1.2 Ω IB1 = 0.5 A 45 100 60 A/µs A/µs A/µs VCE(dyn) Collector-emitter dynamic voltage (3 µs) Collector-emitter dynamic voltage (5 µs) Inductive load Storage time Fall time Cross over time VCC = 300 V IB1 = 0.75 A IB1 = 0.75 A VCC = 300 V IB1 = 0.75 A IB1 = 0.75 A IC = 5 A VBB = -5 V VClamp = 400 V L = 0.5 mH 2.1 8 V V VCE(dyn) 1.1 4 V V ts tf tc 0.8 0.05 0.08 µs µs µs 3/9 Electrical characteristics Table 4. Symbol BUF410A Electrical characteristics (continued) Parameter Inductive load Storage time Fall time Cross over time IC = 5 A VBB = -5 V VClamp = 400 V L = 0.5 mH IC = 5 A Test conditions VCC = 50 V RBB = 1.2 Ω IB1 = 0.5 A TC = 100 °C VCC = 50 V RBB = 1.2 Ω L = 0.5 mH 500 V 1.8 0.1 0.18 µs µs µs Min. Typ. Max. Unit ts tf tc VCEW Maximum collector emitter voltage without snubber VBB = -5 V IB1 = 0.5 A TC = 125 °C ts tf tc ts tf tc Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time IC = 5 A VBB = 0 VClamp = 400 V L = 0.5 mH IC = 5 A VBB = 0 VClamp = 400 V L = 0.5 mH IC = 5 A VCC = 50 V RBB = 0.3 Ω IB1 = 0.5 A VCC = 50 V RBB = 0.3 Ω IB1 = 0.5 A TC = 100 °C VCC = 50 V RBB = 0.3 Ω L = 0.5 mH 500 V 3 0.15 0.25 µs µs µs 1.5 0.04 0.07 µs µs µs VCEW Maximum collector emitter voltage without snubber VBB = 0 IB1 = 0.5 A TC = 125 °C ts tf tc Inductive load Storage time Fall time Cross over time Inductive load Storage time Fall time Cross over time IC = 10 A VBB = -5 V VClamp = 400 V L = 0.25 mH IC = 10 A VBB = -5 V VClamp = 400 V L = 0.25 mH IC = 15 A V CC = 50 V RBB = 1.2 Ω IB1 = 2 A V CC = 50 V RBB = 1.2 Ω IB1 = 2 A TC = 100 °C V CC = 50 V RBB = 1.2 Ω L = 0.1 mH 400 V 3.2 0.12 0.3 µs µs µs 1.9 0.06 0.12 µs µs µs ts tf tc VCEW Maximum collector emitter voltage without snubber VBB = -5 V IB1 = 3 A TC = 125 °C 1. Pulse duration = 300 µs, duty cycle ≤ 1.5% 4/9 BUF410A Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Forward biased safe operating area Figure 3. Reverse biased safe operating area 2.2 Test circuit Figure 4. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data BUF410A 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 BUF410A Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 7/9 Revision history BUF410A 4 Revision history Table 5. Date 18-Mar-2002 13-Mar-2008 Document revision history Revision 2 3 Package change from TO-218 to TO-247. Changes 8/9 BUF410A Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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