BUF420

BUF420 BUF420M HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 2 1 APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF420 and BUF420M are manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 2 TO-3 (version ”R”) TO-218 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj July 1997 Parameter Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T O-218 T otal Dissipation at Tc = 25 C Storage Temperature Max O peration Junction Temperature o Valu e 850 450 7 30 60 6 9 TO -3 200 -65 to 150 150 200 Un it V V V A A A A W o o C C 1/7 BUF420 / BUF420M THERMAL DATA T O-218 R t hj-ca se Thermal Resistance Junction-Case Max 0.63 TO-3 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min. Typ . Max. 0.2 1 0.2 1 1 Un it mA mA mA mA mA V V V CE = V CEV V BE = -1.5 V o V CE = V CEV V BE = -1.5 V Tc =100 C V BE = 5 V I C = 200 mA I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 10 10 20 20 10 10 20 20 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 1 1 2 2 1 1 2 2 A A A A A A A A L = 25 mH 450 7 0.8 V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage T c =100 C T c =100 C 0.9 T c =100 C 1.1 T c =100 C 100 70 150 2.1 o o o o 2.8 0.5 2 1.5 1.5 V V V V V V V V A /µ s A /µ s A /µ s V V V V µs µs µs V BE(s at)∗ Base-Emitter Saturation Voltage di c /dt Rate of rise on-state Collector Current V CC = 300 V R C = 0 t p = 3 µ s o T j =25 C I B1 = 1.5 A T j =100 o C I B1 = 1.5 A Tj =100 o C I B1 = 6 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH R C = 60 Ω o Tj =25 C o Tj =100 C R C = 60 Ω T j =25 o C o T j =100 C V CC = 50 V R BB = 0.6 Ω IB1 = 0.5 A V CC = 50 V R BB = 0.6 Ω IB1 = 1 A o Tj =100 C V CC = 50 V R BB = 0.6 Ω IB1 = 1 A o Tj =125 C V CC = 50 V R BB = 0.15 Ω IB1 = 1 A V CE (3 µ s) Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Storage Time Fall T ime Cross Over T ime Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber Storage Time Fall T ime Cross Over T ime 8 1.1 4 1 0.05 0.08 2 0.1 0.18 500 V CE (5 µ s) ts tf tc ts tf tc V CEW µs µs µs V ts tf tc 1.5 0.04 0.07 µs µs µs 2/7 BUF420 / BUF420M ELECTRICAL CHARACTERISTICS (continued) Symb ol ts tf tc V CEW Parameter Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber Storage Time Fall T ime Cross Over T ime Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber Test Cond ition s I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH I C = 20 A V BB = -5 V V c la mp = 400 V L = 0.12 mH I C = 20 A V BB = - 5 V V c la mp = 400 V L = 0.12 mH I CW off = 30 A V BB = - 5 V L = 0.08 mH o T j =125 C V CC = 50 V R BB = 0.15 Ω IB1 = 1 A o Tj =100 C V CC = 50 V R BB = 0.15 Ω IB1 = 1 A Tj =125 o C V CC = 50 V R BB =0.6 Ω IB1 = 4 A V CC = 50 V R BB = 0.6 Ω IB1 = 4 A o Tj =125 C V CC = 50 V R BB = 0.6 Ω IB1 = 6 A 400 500 Min. Typ . Max. 3 0.15 0.25 Un it µs µs µs V ts tf tc ts tf tc V CEW 2.2 0.06 0.12 3.5 0.12 0.3 µs µs µs µs µs µs V Figure 1: Turn-on Switching Test Circuit 1) Fast electronic switch 2) Non inductive Resistor Figure 2: Turn-off Switching Test Circuit 1) Fast electronic switch 2) Non inductive Resistor 3) Fast recovery rectifier 3/7 BUF420 / BUF420M Turn-on Switching Test Waveforms. Turn-off SwitchingTest Waveforms (inductive load). Forward Biased Safe Operating Areas. Reverse Biased Safe Operating Area Storage Time Versus Pulse Time. 4/7 BUF420 / BUF420M TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H ¯ F R 1 2 3 P025A G 5/7 BUF420 / BUF420M TO-3 (version R) MECHANICAL DATA mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX. DIM. P G A D C U V O N R B P003N 6/7 E BUF420 / BUF420M Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7