BUF420AW

BUF420AW ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: SWITCH MODE POWER SUPPLIES ■ MOTOR CONTROL 3 2 ■ DESCRIPTION The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CEV Collector-Emitter Voltage (V BE = -1.5V) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB I BM 1000 V 450 V 7 V 30 A Collector Peak Current (t p < 5 ms) 60 A 6 A 9 A Base Current Base Peak Current (t p < 5 ms) o P tot Total Dissipation at T c = 25 C Storage Temperature March 2002 Unit Collector Current T stg Tj Value Max. Operating Junction Temperature 200 W -65 to 150 o C 150 o C 1/8 BUF420AW THERMAL DATA R thj-case Thermal Resistance Junction-Case Max o 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit I CER Collector Cut-off Current (R BE = 5 Ω) V CE = 1000 V V CE = 1000 V T C = 100 o C 0.2 1 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 1000 V V CE = 1000 V T C = 100 o C 0.2 1 mA mA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ di c /dt V CE (3µs) V CE (5µs) I C = 200 mA L = 25 mH Emitter Base Voltage (I C = 0) I E = 50 mA Collector-Emitter Saturation Voltage IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 4 4 A A A A IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 4 4 A A A A Base-Emitter Saturation Voltage Rate of rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I B1 = 6 A V 7 V 0.8 2.8 0.5 T C =100o C 2 0.9 T C =100o C 1.5 1.1 T C =100o C RC = 0 t p = 3 µs T C =25o C T C =100 o C T C =100 o C 1.5 100 R C = 60 Ω T C =25 o C T C =100 o C 2.1 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A R C = 60 Ω T C =25 o C T C =100 o C 1.1 I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω I B1 = 1 A ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω I B1 = 1 A T C =100 o C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = - 5 V I B1 = 1 A T C =125 o C V CC = 50 V R BB = 0.6 Ω L = 0.25 mH INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω I B1 = 1 A V V V V 8 V V 4 V V µs µs µs 1 0.05 0.08 2 0.1 0.18 500 V V V V A/µs A/µs A/µs 70 150 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A INDUCTIVE LOAD Storage Time Fall Time Cross Over Time ts tf tc 450 T C =100o C ts tf tc V CEW 2/8 Test Conditions µs µs µs V 1.5 0.04 0.07 µs µs µs BUF420AW ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω I B1 = 1 A T C =100 o C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = 0 I B1 = 1 A T C =125 o C V CC = 50 V R BB = 0.15 Ω L = 0.25 mH ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 20 A V BB = -5 V V clamp = 400 V L = 0.12 mH V CC = 50 V R BB =0.6 Ω I B1 = 4 A ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 20 A V BB = - 5 V V clamp = 400 V L = 0.12 mH V CC = 50 V R BB = 0.6 Ω I B1 = 4 A T C =125 o C Maximum Collector Emitter Voltage without Snubber I CWoff = 30 A V BB = - 5 V L = 0.12 mH T C =125 o C V CC = 50 V R BB = 0.6 Ω I B1 = 6 A ts tf tc V CEW V CEW Min. Typ. Max. Unit 3 0.15 0.25 µs µs µs 500 V µs µs µs 2.2 0.06 0.12 3.5 0.12 0.3 400 µs µs µs V 3/8 BUF420AW DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Forward Biased Safe Operating Area Reverse Biased Safe Operating Area 4/8 BUF420AW Storage Time Versus Pulse Time. Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8 BUF420AW Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). 6/8 BUF420AW TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 BUF420AW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8