BUF460

BUF460AV NPN TRANSISTOR POWER MODULE s s s s s s s EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV VEBO IC I CM IB I BM P tot T s tg Tj V ISO July 1997 Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (tp = 10 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max O peration Junction Temperature Insulation W ithstand Voltage (AC-RMS) o Valu e 1000 450 7 80 160 18 27 270 -65 to 150 150 2500 Un it V V V A A A A W o o V CEO(sus) Collector-Emitter Voltage (IB = 0) C C V 1/7 BUF460AV THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.41 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V c la mp = 450 V I C = 60 A IC IC IC IC = = = = 30 30 60 60 A A A A V CE = 5 V IB IB IB IB = = = = 3A o 3 A Tj = 100 C 12 A o 12 A T j = 100 C T j = 100 C tp = 3 µ s 150 4 2 4.5 0.1 0.3 400 6 3 5 0.2 5 o Min. Typ . Max. 0.2 2 0.2 2 1 Un it mA mA mA mA mA V T j = 100 C T j = 100 C o o V CEO(SUS) * Collector-Emitter Sustaining Voltage hFE∗ V CE(sat )∗ DC Current G ain Collector-Emitter Saturation Voltage 450 15 0.35 2 0.5 2 1.1 1.5 V V V V V V A/ µ s V V µs µs µs V V BE(s at)∗ di C /dt Base-Emitter Saturation Voltage Rate of Rise of On-state Collector I C = 60 A I C = 60 A I B = 12 A I B = 12 A V CC = 300 V R C = 0 I B1 = 18 A T j = 100 o C V CE (3 µ s)• Collector-Emitter Dynamic Voltage V CE (5 µ s) • Collector-Emitter Dynamic Voltage ts tf tc V CEW Storage Time Fall T ime Cross-over T ime Maximum Collector Emitter Voltage Without Snubber V CC = 300 V R C = 30 Ω I B1 = 18 A T j = 100 o C V CC = 300 V R C = 30 Ω o I B1 = 18 A T j = 100 C I C = 30 A V BB = -5 V V c la mp = 400 L = 25 µ H VCC = 50 V R BB = 0.2 Ω V I B1 = 3 A o Tj = 100 C I CW off = 80 A I B1 = 16 A V BB = -5 V V CC = 50 V L = 80 µ H R BB = 0.2 Ω T j = 125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 BUF460AV Safe Operating Areas Thermal Impedance Derating Curve Collector-Emitter Voltage Versus Base-Emitter Resistance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUF460AV Reverse Biased SOA Forward Biased SOA Reverse Biased SOA Forward Biased SOA Switching Time Inductive Load Switching Time Inductive Load Versus Temperature 4/7 BUF460AV DC Current Gain Turn-off Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Turn-on Switching Waveforms. Turn-off Switching Test Circuit Turn-off Switching Waveforms. 1) Fast electronic switch 3) Fast recovery rectifier 2) Non-inductive Resistor 5/7 BUF460AV ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M 6/7 H BUF460AV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7